BAR 42 BAR 43, A, C, S SMALL SIGNAL SCHOTTKY DIODES A K K1 N.C. K2 A BAR42/BAR43 BAR43A A1 K2 K K1 A1 DESCRIPTION A2 A2 General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. BAR43C BAR43S SOT-23 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Parameter Value Unit Repetitive peak reverse voltage 30 V Continuous forward current 100 mA IFSM Surge non repetitive forward current tp=10ms sinusoidal 750 mA Ptot Power dissipation (note 1) Tamb = 25°C 250 mW Tstg Maximum storage temperature range - 65 to +150 °C Tj Maximum operating junction temperature * 150 °C TL Maximum temperature for soldering during 10s 260 °C Note 1: for double diodes, Ptot is the total power dissipation of both diodes. * : 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j−a) THERMAL RESISTANCE Symbol Rth(j-a) Test conditions Junction-ambient * Value 500 Unit °C/W * Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAR 42/BAR 43, A, C, S ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. 30 VBR Tj = 25°C IR = 100µA VF * Tj = 25°C BAR 42 BAR 43 All IR ** Typ. IF = 10 mA 0.35 0.4 IF = 50 mA 0.5 0.65 IF = 2 mA 0.26 V 0.33 IF = 15 mA 0.45 IF = 100 mA 1 Tj = 100°C Pulse test: Unit V VR = 25V Tj = 25°C Max. 500 nA 100 µA Max. Unit pF 5 ns * tp = 380µs, δ < 2% ** tp = 5 ms, δ <2% DYNAMIC CHARACTERISTICS Symbol C trr η* Test Conditions Min. Tj = 25°C Tj = 25°C Irr = 1mA VR = 1V IF = 10 mA RL = 100 Ω F = 1MHz IR = 10 mA Tj = 25°C F = 45Mhz RL = 50 KΩ Vi = 2V CL = 300 pF for BAR 43 Typ. 7 80 % * Detection efficiency. Fig. 1-1: Forward voltage drop versus forward current (typical values, low level). Fig. 1-2: Forward voltage drop versus forward current (typical values, high level). IFM(A) IFM(A) 5E-1 2.00E-2 1.80E-2 Tj=100°C Tj=100°C 1.60E-2 1E-1 1.40E-2 Tj=25°C 1.20E-2 Tj=50°C 1.00E-2 8.00E-3 6.00E-3 Tj=50°C 1E-2 Tj=25°C 4.00E-3 2.00E-3 VFM(V) 0.00E+0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 2/4 VFM(V) 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BAR 42/BAR 43, A, C, S Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). Fig. 3: Reverse leakage current versus junction temperature. IR(µA) IR(µA) 1E+2 1E+4 VR=30V Tj=100°C 1E+3 1E+1 1E+2 1E+0 1E+1 Tj=50°C 1E+0 Tj=25°C 1E-1 1E-1 Tj(°C) VR(V) 1E-2 1E-2 0 5 10 15 20 25 30 Fi g . 4: Junction capacitance versus reverse voltage applied (typical values). 0 25 50 75 100 125 150 Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommendedpad layout, e(Cu)=35µm). C(pF) Zth(j-a)/Rth(j-a) 10 1.00 F=1MHz Tj=25°C δ = 0.5 5 δ = 0.2 0.10 δ = 0.1 2 T Single pulse tp(s) VR(V) 1 1 2 5 10 20 30 0.01 1E-3 1E-2 1E-1 δ=tp/T 1E+0 1E+1 tp 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printedcircuit board FR4, copper thickness:35µm). Rth(j-a) (°C/W) 350 P=0.25W 300 250 200 S(Cu) (mm ) 150 0 5 10 15 20 25 30 35 40 45 50 3/4 BAR 42/BAR 43, A, C, S PACKAGE MECHANICAL DATA SOT 23 (Plastic) A E REF. e D e1 B S A1 L H c A A1 B c D e e1 E H L S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 0.89 1.4 0.035 0.055 0 0.1 0 0.004 0.3 0.51 0.012 0.02 0.085 0.18 0.003 0.007 2.75 3.04 0.108 0.12 0.85 1.05 0.033 0.041 1.7 2.1 0.067 0.083 1.2 1.6 0.047 0.063 2.1 2.75 0.083 0.108 0.6 typ. 0.024 typ. 0.35 0.65 0.014 0.026 FOOT PRINT DIMENSIONS 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.9 0.075 mm inch 1.1 0.043 1.45 0.037 0.9 0.035 Ordering type Marking Package Weight Base qty Delivery mode BAR42 D94 SOT-23 0.01g 3000 Tape & reel BAR43 D95 SOT-23 0.01g 3000 Tape & reel BAR43S DB1 SOT-23 0.01g 3000 Tape & reel BAR43C DB2 SOT-23 0.01g 3000 Tape & reel BAR43S DA5 Epoxy meets UL94,V0 SOT-23 0.01g 3000 Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express writtenapproval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4