BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V V CEO Collector-Emitter Voltage (I B = 0) 35 30 V V EBO Emitter-Base Voltage (I C = 0) 6 V Collector Current 1 A IC I CM Collector Peak Current (tp < 5 ms) P t ot Total Dissipation at T amb ≤ 25 C at T case ≤ 25 o C T stg St orage Temperature Tj o Max. Operating Junction Temperature November 1997 1.5 A 0.8 5 W W -65 to 200 o C 200 o C 1/5 BFY50/BFY51 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 35 218 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V Min. Typ . Max. Un it o 50 2.5 nA µA o 50 2.5 nA µA 50 2.5 nA µA T ca s e = 100 C T ca s e = 100 C Emitter Cut-off Current (I C = 0) V EB = 5 V V EB = 5 V Collector-Base Breakdown Voltage (IE = 0) I C = 100 µA for BFY50 for BFY51 80 60 V V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 30 mA for BFY50 for BFY51 35 30 V V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I C = 100 µA 6 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 150 mA for BFY50 for BFY51 IC = 1 A for BFY50 for BFY51 V (BR)CBO V BE(s at)∗ h FE∗ hfe ∗ fT C CBO Base-Emitter Saturation Voltage I C = 150 mA IC = 1 A DC Current G ain for BFY50 I C = 10 mA I C = 150 mA I C = 1A for BFY51 I C = 10 mA I C = 150 mA I C = 1A Small Signal Current Gain Transition F requency Collector Base Capacitance I B = 15 mA I B = 15 mA I B = 0.1 A 0.2 0.35 V V 0.7 0.7 1 1.6 V V 0.95 1.5 1.3 2 V V V CE = 10 V V CE = 10 V V CE = 10 V 20 30 15 40 55 30 V CE = 10 V V CE = 10 V V CE = 10 V 30 40 15 55 70 40 f = 1KHz I C = 50 mA for BFY50 for BFY51 VCE = 10 V IE = 0 0.14 0.14 I B = 0.1 A V CE = 6 V I C = 1 mA for BFY50 for BFY51 I C = 10 mA for BFY50 for BFY51 ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2/5 T case = 100 oC 25 30 45 60 V CB = 10 V 60 50 f = 1MHz 100 110 MHz MHz 10 pF BFY50/BFY51 ELECTRICAL CHARACTERISTICS (continued) Symb ol hie hre h oe Parameter Input Impedance Reverse Voltage Ratio Output Admittance Test Cond ition s I C = 10 mA for BFY50 for BFY51 VCE = 5 V I C = 10 mA for BFY50 for BFY51 VCE = 5 V I C = 10 mA for BFY50 for BFY51 VCE = 5 V Min. Typ . f = 1KHz Max. Un it 180 220 Ω Ω 55 70 10 10 -6 30 35 µS µS f = 1KHz f = 1KHz -6 td Delay Time I C = 150 mA I B1 = 15 mA VCC = 10 V V BE = -2 V 15 ns tr Rise Time I C = 150 mA I B1 = 15 mA VCC = 10 V V BE = -2 V 40 ns ts Storage Time I C = 150 mA VCC = 10 V I B1 = -IB2 = 15 mA 300 ns tf Fall T ime I C = 150 mA VCC = 10 V I B1 = -IB2 = 15 mA 60 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 3/5 BFY50/BFY51 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 BFY50/BFY51 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 5/5