2N4036 MEDIUM-SPEED SWITCH DESCRIPTION The 2N4036 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is intended particularly as medium speed saturated switch and general purpose amplifier. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-base Voltage (I E = 0) Value Unit – 90 V V CEX Collector-emitter Voltage (V BE = 1.5 V) – 85 V V CER Collector-emitter Voltage (R BE ≤ 200 Ω) – 85 V V CEO Collector-emitter Voltage (I B = 0) – 65 V V EBO Emitter-base Voltage (I C = 0) – 6 V IC Collector Current – 1 A IB Base Current Pt o t T s t g, T j October 1988 Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature – 0.5 A 1 7 W W – 65 to 200 °C 1/5 2N4036 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 25 175 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cutoff Current (I E = 0) V CB = – 60 V – 20 nA I CEO Collector Cutoff Current (I B = 0) V CE = – 30 V – 0.5 µA I E BO Emitter Cutoff Current (I C = 0) V EB = – 5 V – 20 nA V( BR)CB O Collector-base Breakdown Voltage (I E = 0) I C = – 100 µA – 90 V V ( BR) CEX * Collector-emitter Breakdown Voltage (V BE = 1.5 V) I C = – 10 mA – 85 V V (BR)CE R * Collector-emitter Breakdown Voltage (R BE = 200 Ω) I C = – 10 mA – 85 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = – 10 mA – 65 V V (B R)E BO Emitter-base Breakdown Voltage (I C = 0) I E = – 100 µA –7 V V CE( sat )* Collector-emitter Saturation Voltage I C = – 150 mA I B = – 15 mA VB E * Base-emitter Voltage I C = – 150 mA V CE = – 10 V h F E* DC Current Gain I C = – 0.1 mA I C = – 150 mA I C = – 500 mA V CE = – 10 V V CE = – 10 V V CE = – 10 V I C = – 50 mA f = 20 MHz V CE = – 10 V IC = 0 f = 1 MHz V E B = – 0.5 V IE = 0 f = 1 MHz V CB = – 10 V I C = – 150 mA I B1 = – 15 mA V CC = – 30V fT C EBO C CBO t o n ** t o f f** Transition Frequency Emitter-base Capacitance Collector-base Capacitance Turn-on Time Turn-off Time 2/5 V – 1.1 V 140 MHz 60 pF 90 pF 30 I C = – 150 mA V CC = – 30 V I B1 = – I B2 = – 15 mA * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. ** See test circuit. 20 40 20 – 0.65 ns 110 ns 700 2N4036 Test Circuit for ton, toff. 3/5 2N4036 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N4036 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5