BYW100-200 ® HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS F126 (JEDEC DO-204AC) DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V IFRM Repetitive peak forward current * tp = 5 µs F = 1KHz 80 A IF(AV) Average forward current * Ta = 95°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms sinusoidal 50 A Tstg Storage temperature range -65 +150 °C + 150 °C 230 °C Tj Maximum operating junction temperature TL Maximum lead temperature for soldering during 10s at 4mm from case * On infinite heatsink with 10mm lead length. October 1999 - Ed: 3A 1/5 BYW100-200 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 45 °C/W Junction to ambient * * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests conditions Min. Max. Unit Tj = 25°C 10 µA Tj = 100°C 0.5 mA 1.2 V Reverse leakage current VR = VRRM Forward voltage drop IF = 4.5 A Tj = 25°C IF = 1.5 A Tj = 100°C Typ. 0.78 0.85 Typ. Max. Unit 35 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.075 IF2(RMS) RECOVERY CHARACTERISTICS Symbol Tests conditions Min. trr IF = 1 A tfr IF = 1.5 A dIF/dt = -50 A/µs Measured at 1.1 x VF max. Tj = 25°C 30 ns VFP IF = 1.5 A dIF/dt = -50 A/µs Tj = 25°C 5 V Qrr IF = 1.5 A dIF/dt = -20 A/µs VR ≤ 30 V Tj = 25°C 10 nC dIF/dt = - 50 A/µs VR = 30 V Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.6 δ = 0.05 δ = 0.1 δ = 0.2 δ=1 δ = 0.5 1.4 1.2 1.0 0.8 0.6 T 0.4 0.2 0.0 0.0 2/5 δ=tp/T IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 1.8 Tj = 25°C Fig. 2: Average forward current versus ambient temperature (δ=0.5). 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W Tamb(°C) 0 25 50 75 100 125 150 BYW100-200 Fig. 3: Thermal resistance versus lead length. Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu)=35µm). Rth(°C/W) 110 100 90 80 70 60 50 40 30 20 10 0 Zth(j-a)/Rth(j-a) 1.00 Rth(j-a) δ = 0.5 δ = 0.2 Rth(j-l) 0.10 δ = 0.1 Single pulse Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 50.00 0.01 1E-2 tp(s) 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 20 F=1MHz Tj=25°C Tj=100°C (Typical values) 10 10.00 Tj=25°C 5 Tj=100°C 1.00 2 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 7: Reverse recovery time versus dIF/dt . 150 VR(V) 1 1 100 200 Fig. 8: Peak reverse recovery current versus dIF/dt. trr(ns) 2.5 IF=1.5A VR=30V 90% confidence Tj=100°C 10 IRM(A) IF=1.5A VR=30V 90% confidence 2.0 100 1.5 Tj=100°C Tj=25°C 1.0 50 Tj=25°C 0.5 0 dIF/dt(A/µs) 1 10 100 0.0 dIF/dt(A/µs) 1 10 100 3/5 BYW100-200 Fig. 9: Dynamic parameters versus junction temperature. 250 % Qrr 200 IRM 150 100 25 4/5 trr 50 75 Tj(°C) 100 125 BYW100-200 PACKAGE MECHANICAL DATA F126 C C A D D B DIMENSIONS REF. Millimeters Inches A Min. 6.05 Typ. Max. Min. Typ. Max. 6.20 6.35 0.238 0.244 0.250 B 2.95 3.00 C 26 D 0.76 3.05 0.116 0.118 0.120 31 0.81 1.024 1.220 0.86 0.030 0.032 0.034 Ordering code Marking Package Weight Base qty Delivery mode BYW100-200 BYW100-200 F126 0.393g 1000 Ammopack BYW100-200RL BYW100-200 F126 0.393g 6000 Tape and reel Cooling method: by conduction (method A) Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5