SD4100 RF POWER TRANSISTORS UHF TV/LINEAR APPLICATIONS • 470 - 860 MHz • 28 VOLTS • CLASS AB PUSH PULL • DESIGNED FOR HIGH POWER LINEAR OPERATION • HIGH SATURATED POWER CAPABILITY • INTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED IMPEDANCES FOR SIMPLIFIED CIRCUIT DESIGN AND WIDE INSTANTANEOUS BANDWIDTH M173 epoxy sealed ORDER CODE BRANDING SD4100 SD4100 • GAIN = 8.5 dB MIN. • POUT = 100 W MIN. CW • POUT = 125 W PEAK SYNC PIN CONNECTION DESCRIPTION The SD4100 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers. 1 1 2 2 3 1. Collector 3. Emitter 2. Base ABSOLUTE MAXIMUM RATINGS (TCASE = 25 0C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Value 65 32 3.5 16 220 Unit V V V A W Junction Temperature +200 0 Storage Temperature -65 to +150 0 C C THERMAL DATA Rth(j-c) Jun 2000 Junction-Case Thermal Resistance 0.8 0 C/W 1/4 SD4100 ELECTRICAL SPECIFICATION (TCASE = 25 0C) STATIC Symbol Test Conditions Min. Typ. Max. Unit BVCBO IC = 40 mA IE = 0 mA 65 --- --- V BVCEO IC = 80 mA IB = 0 mA 32 --- --- V BVCER IC = 120 mA RBE = 75 Ω 40 --- --- V BVEBO IE = 20 mA IC = 0 mA 3.5 --- --- V ICEO VCE = 28 V IB = 0 mA --- --- 10 mA hFE VCE = IC = 4 A 25 --- 120 --- 5V REF.1017623C DYNAMIC Symbol COB Test Conditions f = 1 MHz VCB = 28 V (each side) COB is not measurable due to Internal Output Matching Network Min. Typ. Max. Unit --- 50 --- pF Min. Typ. Max. Unit DYNAMIC (CW) Symbol Test Conditions P1dB f = 860 MHz PREF = 25 W VCC = 28 V ICQ = 200 mA 100 --- --- W GP f = 860 MHz POUT = 100 W VCC = 28 V ICQ = 200 mA 8.5 --- --- dB ηC f = 860 MHz POUT = 100 W VCC = 28 V ICQ = 200 mA 55 --- --- % f = 860 MHz POUT = 100 W ALL PHASE ANGLES VCC = 28 V ICQ = 200 mA 3:1 --- --- VSWR Min. Typ. Max. Unit Load Mismatch DYNAMIC (VIDEO - STANDARD BLACK LEVEL) Symbol 2/4 Test Conditions GP f = 860 MHz POUT = 125 W VCC = 28 V ICQ = 200 mA 8.5 --- --- dB P1dB f = 860 MHz PREF = 25 W VCC = 28 V ICQ = 200 mA 125 --- --- W P1dB f = 860 MHz PREF = 25 W VCC = 32 V ICQ = 100 mA 150 --- --- W SD4100 M173 (.438 X .450 4/L N/HERM W/FLG) MECHANICAL DATA DIM. mm MIN. A B TYP. MIN. 1.40 3.05 TYP. .120 .130 19.94 11.56 E MAX .055 3.30 C D Inch MAX 11.81 .785 .455 .465 3.30 .130 F 5.84 .230 G 21.44 .844 H 27.81 28.07 1.095 1.105 J 13.34 13.59 .525 .535 K 0.05 0.13 .002 .005 L 1.40 1.65 .055 .065 M 2.03 2.41 .080 .095 11.30 11.56 N P 4.95 .195 .445 .455 1010999C 3/4 SD4100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics‚ 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4