ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 oC LARGE RBSOA 1 2 3 TO-220 APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CEV Collector-Emitter Voltage (V BE = -1.5V) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 8 A 16 A 4 A IC I CM IB Collector Peak Current Base Current I BM Base Peak Current P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj July 1998 o Max. O perating Junction Temperature 8 A 80 W -65 to 150 o C 150 o C 1/6 ST13007 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 1.56 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEV V CE = rated V CEV Emitter Cut-off Current (I C = 0) V EB = 9 V V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ V BE(s at)∗ h FE∗ Test Cond ition s Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A Max. Un it 10 0.5 µA mA 1 mA 400 IB IB IB IB = = = = 0.4 A 1 A 2 A 1 A IC = 2 A IC = 5 A IC = 5 A IB = 0.4 A IB = 1 A IB = 1 A IC = 2 A Group A Group B IC = 5 A V CE = 5 V V Tc = 100 oC o Tc = 100 C 1 2 3 3 V V V V 1.2 1.6 1.5 V V V V CE = 5 V 16 26 5 30 40 30 3 4.5 350 µs ns 2.5 110 µs ns RESISTIVE LO AD Storage Time Fall T ime IC = 2 A I B1 = 0.4 A t p = 30 µs V CC = 300 V IB2 = -0.4 A ts tf INDUCTIVE LOAD Storage Time Fall T ime IC = 5 A I B1 = 1 A L = 200 µH V CL = 250 V IB2 = -2 A INDUCTIVE LOAD Storage Time Fall T ime IC = 5 A I B1 = 1 A L = 200 µH V CL = 250 V IB2 = -2 A T c = 125 o C tf Typ . T c = 100 o C ts tf ts Min. 1.6 60 2.3 110 µs ns * Pulsed: Pulse duration = 300 µs, duty cycle 2 % Note : DC current gain pre-selected product (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/6 ST13007 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 ST13007 Inductive Fall Time Reverse Biased SOA 4/6 Inductive Storage Time ST13007 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/6 ST13007 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 6/6