STD1805 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ ■ Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") APPLICATIONS: CCFL DRIVERS ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS 3 3 2 1 1 IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") ■ INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Collector Current Collector Peak Current (t p < 5 ms) Base Current P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature November 2003 Value Unit 150 V 60 V 7 V 5 A 10 A 2 A 15 W -65 to 150 o C 150 o C 1/8 STD1805 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 8.33 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = 40 V 0.1 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 4 V 0.1 µA Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 1 mA V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC Base-Emitter Saturation Voltage V BE(sat) ∗ h FE ∗ fT C CBO t ON ts tf 150 V 60 V 7 V I B = 5 mA I B = 50 mA I B = 150 mA I B = 200 mA 150 200 50 300 400 600 mV mV mV mV IC = 2 A I B = 100 mA 0.9 1.2 V DC Current Gain I C = 100 mA IC = 5 A I C = 10 A V CE = 2 V V CE = 2 V V CE = 2 V Transition frequency V CE = 10 V I C = 50 mA 150 MHz Collector-Base Capacitance V CB = 10 V f = 1 MHz 50 pF IC = 1 A I B1 = - I B2 = 0.1 A V CC = 30 V 50 1.35 120 ns µs ns RESISTIVE LOAD Turn- on Time Storage Time Fall Time = = = = * Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/8 Min. 100 mA 2A 3A 5A 200 85 20 400 STD1805 Derating Curve DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 3/8 STD1805 Switching Times Resistive Load Switching Times Resistive Load Switching Times Resistive Load Switching Times Inductive Load Switching Times Inductive Load 4/8 STD1805 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/8 STD1805 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 B6 C 0.033 0.30 0.012 0.95 0.45 0.60 0.037 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 L2 V1 0.80 10 o 1.00 0.047 0.031 10 0.039 o P032N_E 6/8 STD1805 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 7/8 STD1805 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8