STN851 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ ■ Ordering Code Marking Shipment STN851 N851 Tape & Reel VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL APPLICATIONS: EMERGENCY LIGHTING ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS ■ 2 1 2 3 SOT-223 DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB I BM Collector Current Unit 150 V 60 V 7 V 5 A 10 A Base Current 1 A Base Peak Current (t p < 5 ms) 2 A Collector Peak Current (t p < 5 ms) o P tot Total Dissipation at T amb = 25 C T stg Storage Temperature Tj Value Max. Operating Junction Temperature September 2003 1.6 W -65 to 150 o C 150 o C 1/7 STN851 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient • Device mounted on a P.C.B. area of 1 cm Max o 78 C/W 2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit 50 1 nA µA 10 nA I CBO Collector Cut-off Current (I E = 0) V CB = 120 V V CB = 120 V I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 150 V I C = 10 mA 60 V 7 V V (BR)CBO V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage V BE(on) ∗ h FE ∗ fT C CBO t on ts tf T j = 100 o C I B = 5 mA I B = 50 mA I B = 50 mA I B = 200 mA 10 70 140 320 50 120 250 500 mV mV mV mV IC = 4 A I B = 200 mA 1 1.15 V Base-Emitter On Voltage IC = 4 A V CE = 1 V 0.89 1 V DC Current Gain IC IC IC IC V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V = = = = = = = = 100 mA 1A 2A 5A 10 mA 2A 5A 10 A 150 150 90 30 300 270 140 50 350 Transition frequency V CE = 10 V I C = 100 mA 130 MHz Collector-Base Capacitance V CB = 10 V f = 1 MHz 50 pF IC = 1 A I B1 = - I B2 = 0.1 A V CC = 10 V 50 1.35 120 ns µs ns RESISTIVE LOAD Turn- on Time Storage Time Fall Time * Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/7 Min. STN851 Derating Curve DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 3/7 STN851 Switching Times Resistive Load Switching Times Resistive Load Switching Times Resistive Load Switching Times Inductive Load Switching Times Inductive Load 4/7 STN851 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 STN851 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 10o V A1 10o 0.02 P008B 6/7 STN851 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7