STMICROELECTRONICS STTA312B

STTA312B

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
3A
VRRM
trr (typ)
1200 V
65 ns
VF (max)
1.7 V
K
FEATURES AND BENEFITS
SPECIFICTO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION
ULTRA-FAST, SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES AND
PARTICULARY LOW FORWARD VOLTAGE
HIGHFREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
A
NC
DPAK
DESCRIPTION
They are particularly suitable in motor control
circuitries, or in primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitablefor the secondaryof SMPS as high voltage
rectifier diodes.
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they also highly decrease power losses in any
associated switching IGBT or MOSFET in all
”freewheel mode” operations.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
VRSM
Non repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
6
A
IFRM
Repetitive peak forward current
tp = 5 µs F = 5kHz square
35
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
25
A
Tstg
Storage temperature range
- 65 to + 150
°C
125
°C
Tj
Maximum operating junction temperature
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
1/8
STTA312B
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P1
Pmax
Parameter
Tests conditions
Value
Unit
6.5
°C/W
Junction to case thermal resistance
Conduction power dissipation
IF(AV) = 3A, δ = 0.5
Tc = 80°C
6.7
W
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tc = 76°C
7.5
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF **
IR *
Vto
rd
Test pulses :
Parameter
Tests conditions
Forward voltage drop
Reverse leakage current
Threshold voltage
IF = 3 A
Tj = 25°C
IF = 3 A
Tj = 125°C
VR = 0.8
X VRRM
Tj = 25°C
Ip < 3.IAV
Tj = 125°C
Min.
Typ.
1.15
Tj = 125°C
150
Dynamic resistance
Max.
Unit
1.8
V
1.7
20
µA
400
µA
1.15
V
185
mΩ
* tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
To evaluatethe maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Tj = 25°C
trr
IRM
S factor
Test conditions
Maximum
recovery current
Softness factor
Min. Typ. Max. Unit
IF= 0.5A IR=1A Irr= 0.25A
IF= 1A dIF/dt= 50A/µs
VR= 30V
Tj = 125°C
Tj = 125°C
65
ns
115
A
IF= 3A VR= 600V
dIF/dt = -16A/µs
dIF/dt = -50A/µs
3.6
6.0
IF= 3A
VR= 600V
dIF/dt = -50A/µs
1.2
-
TURN-ON SWITCHING
Symbol
Parameter
tfr
Forward recovery
time
VFP
Peak forward voltage
2/8
Test conditions
Tj = 25°C
IF=3A dIF/dt = 16A/µs
Measured at 1.1 x VFmax
Min.
Typ.
Max.
Unit
900
ns
35
V
STTA312B
Fig. 1: Conductionlosses versus average current.
Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A)
P1(W)
3E+1
8
7
δ = 0.2
δ = 0.1
δ = 0.5
1E+1
6
5
Tj=125°C
1E+0
δ=1
4
3
1E-1
2
1
Tj=25°C
IF(av) (A)
0
0.0
0.5
1.0
1.5
VFM(V)
2.0
2.5
3.0
3.5
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
1E-2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence).
IRM(A)
Zth(j-c)/Rth(j-c)
14
1.0
VR=600V
Tj=125°C
12
0.8
IF=2*IF(av)
10
δ = 0.5
0.6
8
0.4
δ = 0.1
0.2
IF=IF(av)
6
δ = 0.2
T
4
Single pulse
δ=tp/T
tp(s)
0.0
1E-3
1E-2
2
tp
1E-1
1E+0
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
0
dIF/dt(A/µs)
0
VR=600V
Tj=125°C
400
IF=2*IF(av)
300
IF=IF(av)
200
dIF/dt(A/µs)
10
30
40
50
60
70
80
90
100
S factor
500
0
20
Fig. 6: Softness factor tb/ta versus dI F/dt (typical
values).
trr(ns)
600
100
10
20
30
40
50
60
70
80
90
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
IF<2*IF(av)
VR=600V
Tj=125°C
dIF/dt(A/µs)
0
10
20
30
40
50
60
70
80
90
100
3/8
STTA312B
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj=125°C).
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
1.1
60
IF=IF(av)
Tj=125°C
50
S factor
1.0
40
0.9
30
IRM
20
0.8
10
Tj(°C)
0.7
25
50
0
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
1000
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
900
800
700
600
500
dIF/dt(A/µs)
400
4/8
0
20
40
60
80
100
dIF/dt(A/µs)
0
20
40
60
80
100
STTA312B
APPLICATION DATA
The 1200V TURBOSWITCHTM series has been
designed to provide the lowest overall power
losses in all frequency or high pulsed current
operations.
In such application (fig. A to D), the way of
calculating the power losses is given below :
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the diode
due to the diode
Fig. A : ”FREEWHEEL MODE”.
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH
IL
VR
t
T
F = 1/T
= t/T
LOAD
5/8
STTA312B
APPLICATION DATA (Cont’d)
Fig. B : SNUBBER DIODE.
Fig. C : DEMAGNETIZING DIODE.
PWM
t
T
F = 1/T
= t/T
Fig. D : RECTIFIER DIODE.
Fig. E : STATIC CHARACTERISTICS.
Conduction losses :
I
P1 = Vt0 x IF(AV) + Rd x IF2(RMS)
IF
Rd
Reverse losses :
VR
V
IR
6/8
V tO
VF
P2 = VR x IR x (1 - δ)
STTA312B
APPLICATION DATA (Cont’d)
Fig. F : TURN-OFF CHARACTERISTICS.
Turn-on losses :
(in the transistor, due to the diode)
V
IL
VR × IRM 2 × (3+2 × S) F
6 x dIF ⁄ dt
VR × IRM × IL ×(S + 2) × F
+
2 × dIF ⁄ dt
P5 =
TRANSISTOR
I
t
Turn-off losses :
I
dI F /dt
DIODE
P3 =
ta tb
V
VR × IRM 2 × × S × F
6 x dIF ⁄ dt
t
dIR /dt
I RM
VR
trr = ta + tb
I
dI F /dt = VR /L
S = tb / ta
Turn-off losses :
with non negligible serial inductance
RECTIFIER
OPERATION
ta tb
V
P3’ =
t
IRM
VR × IRM 2 × S × F L × IRM 2 × F
+
6 x dIF ⁄ dt
2
dI R /dt
VR
P3, P3’ and P5 are suitable for power MOSFET
and IGBT
trr = ta + tb
S = tb/ta
Fig. G : TURN-ON CHARACTERISTICS.
IF
I Fmax
dI F /dt
0
Turn-on losses :
P4 = 0.4 (VFP - VF) x IFmax x tfr x F
t
VF
V Fp
VF
1.1V F
0
tfr
t
7/8
STTA312B
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
Millimeters
Min.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
Max
2.20
2.40
0.90
1.10
0.03
0.23
0.64
0.90
5.20
5.40
0.45
0.60
0.48
0.60
6.00
6.20
6.40
6.60
4.40
4.60
9.35
10.10
0.80 typ.
0.60
1.00
0°
8°
Inches
Min.
Max.
0.086
0.094
0.035
0.043
0.001
0.009
0.025
0.035
0.204
0.212
0.017
0.023
0.018
0.023
0.236
0.244
0.251
0.259
0.173
0.181
0.368
0.397
0.031 typ.
0.023
0.039
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
6.7
6.7
6.7
3
1.6
1.6
2.3
Ordering type
2.3
Marking
STTA312B
A312
STTA312B-TR
A312
Epoxy meets UL94,V0
Package
Weight
Base qty
Delivery mode
DPAK
DPAK
0.3g
0.3g
75
2500
Tube
Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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