MDV04-600 ® HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO MAJOR PRODUCT CHARACTERISTICS IFpeak 4A VRRM 600 V trr 55 ns VF (max) 1.2 V FEATURES AND BENEFITS TURBOSWITCH TM OUTSTANDING BENEFITS. HIGH REVERSE VOLTAGE : 600 V LOW POWER LOSSES INDUCING LOW TEMPERATURE AND HIGH RELIABILITY. OPTIMIZED TRADE-OFF BETWEEN trr AND SOFTNESS FOR VIDEO HORIZONTAL DEFLECTION. DO-201AD (plastic) DESCRIPTION High voltage ultra-fast diode especially designed for modulation and flyback rectification in standard and high resolution displays for TV’s and monitors. The device is packaged in a DO-201AD axial enveloppe. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive peak reverse voltage VALUE Unit 600 V Forward peak current (1) δ=0.5 Ta=115°C triangular 4 A IFRM Repetitive peak forward current tp=5µs F=1kHz square 100 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 80 A Tstg Storage temperature range - 40 to 150 °C 150 °C IF peak Tj Maximum operating junction temperature (1) on infinite heatsink with 10mm lead length August 1999 - Ed: 4A 1/4 MDV04-600 THERMAL RESISTANCES Symbol Parameter Rth(j-l) Junction to lead Rth(j-a) Junction to ambient on printed circuit Max. Unit 20 °C/W 75 °C/W L lead = 10mm STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Typ. Max. Unit Reverse leakage current VR = 480V Tj = 25°C Tj = 125°C 50 0.75 µA mA VF ** Forward voltage drop IF = 4 A Tj = 25°C Tj = 125°C 1.28 1.20 V V Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Typ. Max. Unit IF = 0.5A IR = 1A Irr = 0.25A 55 75 ns IF = 100 mA IR = 100 mA Irr = 10mA 130 IR * DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test Conditions ns DYNAMIC ELECTRICAL CHARACTERISTICS TURN-ON SWITCHING Symbol Parameter tfr Forward recovery time VFP Peak forward voltage Test Conditions IF = 4 A dIF/dt = 100 A/µs Measured at1.1 x VF max. Tj = 25°C To evaluate the maximum conduction losses use the following equation : P= 1.0 x Ip 0.050 x Ip 2 xδ+ xδ 2 3 δ : duty cycle Ip : Peak current Ex : for Ip = 4 A and δ = 0.5, P = 1.2 Watts. 2/4 Typ. Max. Unit 0.5 µs 15 V MDV04-600 Fig. 1: Power dissipation versus peak forward current (triangular waveform, δ=0.5). Fig. 2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm), recommended pad layout). PF(av)(W) 1.4 K=[Zth(j-a)/Rth(j-a)] 1E+0 1.2 δ = 0.5 1.0 δ = 0.2 0.8 1E-1 δ = 0.1 0.6 0.4 1E-2 0.2 Single pulse T Ip(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 3: Forward voltage drop versus forward current (maximum values). t(s) 1E-3 1E-3 1E-2 1E-1 1E+0 δ=tp/T 1E+1 1E+2 tp 1E+3 Fig. 4: Reverse recovery time versus dIF/dt. IFM(A) trr(ns) 1E+2 400 IF=Ip 90% confidence Tj=125°C 350 1E+1 300 250 1E+0 200 Tj=125°C Tj=25°C 150 100 1E-1 VFM(V) 1E-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Fig. 5: Transient peak forward voltage versus dIF/dt. 50 0 0 20 40 60 80 100 120 140 160 180 200 Fig. 6: Forward recovery time versus dIF/dt. VFP(V) 20 dIF/dt(A/µs) tfr(ns) 350 IF=Ip 90% confidence Tj=125°C IF=Ip 90% confidence Tj=125°C Vfr=1.5V 300 15 250 200 10 150 100 5 dIF/dt(A/µs) 0 0 20 40 60 80 100 120 140 160 180 200 50 0 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 3/4 MDV04-600 PACKAGE MECHANICAL DATA DO-201AD B note 1 A E B E ØD ØC note 1 ØD note 2 DIMENSIONS REF. Millimeters Min. A B Max. Min. 9.50 25.40 NOTES Inches Max. 0.374 1.000 ∅C 5.30 0.209 ∅D 1.30 0.051 E 1.25 0.049 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Ordering type Marking Package Weight Base qty Delivery mode MDV04-600 MDV04-600 DO-201AD 1.166g. 600 Ammopack MDV04-600RL MDV04-600 DO-201AD 1.166g. 1900 Tape & reel Epoxy meets UL94,V0 Polarity : Cathode indicated by polarity band Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4