ST1803DHI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS 3 2 1 APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOR TV DESCRIPTION The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM RBE =25 Ω T yp. ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (IE = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 600 V V EBO Emitt er-Base Voltage (I C = 0) 7 V Collector Current 10 A Collector Peak Current (tp < 5 ms) 15 A 4 A IC I CM IB Parameter Base Current P t ot Total Dissipation at T c = 25 o C T stg St orage Temperature Tj Max. Operating Junction T emperature January 2000 50 W -65 to 150 o C 150 o C 1/6 ST1803DHI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 4 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 4 A IB = 0.8 A IB = 1.2 A V BE(s at)∗ Base-Emitter Saturation Voltage IC = 4 A IB = 0.8 A DC Current G ain IC = 1 A I C = 4.5 A V CE = 5 V V CE = 5 V Diode F orward Voltage IF = 5 A Emitter-Breakdown Voltage I E = 700 mA INDUCTIVE LOAD Storage Time Fall Time IC = 4 A L B = 5 µH f = 16 KHz I EBO h FE∗ VF BV EB0 ts tf Min. o Tj = 125 C 130 2/6 3 10 4 Max. Un it 1 2 mA mA 400 mA 5 1.5 V 1.2 V 15 20 9 1.5 2 7 IBon (END) = 0.8 A V BB = -2.5 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Typ . Thermal Impedance V V 5 0.3 6 0.6 µs µs ST1803DHI Derating Curve Biase Emitter Saturation Voltage Collector Emitter Saturation Voltage DC Current Gain Power Losses At 16 KHz Switching Time Inductive Load 3/6 ST1803DHI Reverse Biased SOA Inductive Load Switching Test Circuits. 4/6 ST1803DHI ISOWATT218 NARROW LEADS MECHANICAL DATA DIM. A C D D1 E F F2 F3 F5 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 0.75 1.50 1.90 mm TYP. 10.80 15.80 MAX. 5.65 3.80 3.10 2.08 0.95 0.95 1.70 2.10 1.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.030 0.059 0.075 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 0.425 0.622 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 MAX. 0.222 0.150 0.122 0.082 0.037 0.037 0.067 0.083 0.043 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 0.146 P025C/B 5/6 ST1803DHI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6