TSM3400 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS (on), Vgs @ 4.5V, Ids @ 2A =70mΩ RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ Features Rugged and reliable Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package TSM3400CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30V V Gate-Source Voltage VGS ± 20 V ID 3.5 A IDM 13 A 1.25 W Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation o Ta = 25 C Ta = 75 oC Operating Junction Temperature PD +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 100 TJ Operating Junction and Storage Temperature Range 0.8 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM3400 1-5 2005/05 rev. A o C/W Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = - 250uA BVDSS 30 -- -- Drain-Source On-State Resistance VGS = 10V, ID = 3.5A RDS(ON) -- 40 50 Drain-Source On-State Resistance VGS = 4.5V, ID = 2A RDS(ON) -- 55 70 Gate Threshold Voltage VDS = VGS, ID = - 250uA VGS(TH) 1 1.7 2.5 V Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS =5V, VGS = 10V ID(ON) 10 -- -- A Forward Transconductance VDS = 5V, ID = 3.5A gfs -- 6 -- S Qg -- 6.8 -- Qgs -- 3.1 -- Gate-Drain Charge Qgd -- 1.95 -- Turn-On Delay Time td(on) -- 14.2 -- tr -- 4.8 -- td(off) -- 19.6 -- tf -- 9.3 -- Ciss -- 600 -- Coss -- 125 -- Crss -- 95 -- -- - 0.8 - 1.2 mΩ Dynamic Total Gate Charge Gate-Source Charge VDS =10V, ID = 3.5A, VGS = 4.5V Turn-On Rise Time VDD = 10V, RL = 10Ω, Turn-Off Delay Time ID = 1A, VGEN = 10V, RG = 6Ω Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz nC nS pF Source-Drain Diode Diode Forward Voltage IS = - 1.6A, VGS = 0V VSD Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM3400 2-5 2005/05 rev. A V Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM3400 3-5 2005/05 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM3400 4-5 2005/05 rev. A SOT-23 Mechanical Drawing A B F A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 F G 1.04 0.07 DIM E G D TSM3400 1.08 0.09 0.041 0.003 C 5-5 2005/05 rev. A 0.043 0.004