ETC AO3400

AO3400
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), [email protected], [email protected] < 28mΩ
RDS(ON), [email protected], [email protected] < 33mΩ
RDS(ON), [email protected], [email protected] < 52mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
G
A
B
C
D
E
Millimeter
Min.
Max.
2.70
3.10
2.65
2.95
1.50
1.70
0.35
0.50
0
0.10
F
0.45
REF.
0.55
S
G
H
K
J
L
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
M
0°
REF.
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current
ID
5.8
Pulsed Drain Current
IDM
30
Unit
V
A
TA = 25oC
Maximum Power Dissipation
o
1.4
PD
TA = 75 C
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
-1-
W
1
TJ, Tstg
-55 to 150
RθJA
145
o
o
C
C/W
AO3400
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
Parameter
Test Condition
Symbol
Min.
Typ.
Miax.
Unit
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250uA
30
V
Drain-Source On-State Resistance
RDS(on)
VGS = 10V, ID = 5.8A
22.0
28.0
Drain-Source On-State Resistance
RDS(on)
VGS = 4.5V, ID =5A
27.0
33.0
Drain-Source On-State Resistance
RDS(on)
VGS = 2.5V, ID =4A
43.0
52.0
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
Gate Body Leakage
IGSS
VGS = ± 12V, VDS = 0V
Forward Transconductance
gfs
VDS = 5V, ID = 5A
10
15
Gate Resistance
Rg
F=1.0MHz
6
7
7.5
11
14
0.7
mΩ
1.4
V
1
uA
±100
nA
S
Ω
Dynamic
Total Gate Charge
Qg
VDS = 15V, ID = 5.8A
Gate-Source Charge
Qgs
nC
1.6
VGS = 4.5V
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
2.8
7
11
15
20
38
50
3
10
VDD = 15V, RL=2.7Ω
Turn-On Rise Time
tr
ns
ID = 1A, VGEN = 10V
Turn-Off Delay Time
td(off)
RG = 3Ω
Turn-Off Fall Time
tf
Input Capacitance
Ciss
340
VDS = 10V, VGS = 0V
Output Capacitance
Coss
pF
115
f = 1.0 MHz
Reverse Transfer Capacitance
Crss
33
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD
IS = 1.6A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
-2-
1.6
A
1.2
V
AO3400
Characteristics Curve
-3-