UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75Ω Features Description • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 9nC) • Low Crss ( Typ. 4pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage - Pulsed Single Pulsed Avalanche Energy V 2.2 -Continuous (TC = 100oC) Drain Current ±25 3.7 Drain Current IDM Units V -Continuous (TC = 25oC) ID EAS FDD5N50NZF 500 A (Note 1) 14 A (Note 2) 165 mJ IAR Avalanche Current (Note 1) 3.3 A EAR Repetitive Avalanche Energy (Note 1) 6.25 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns (Note 3) (TC = 25oC) 62.5 W - Derate above 25oC 0.5 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient ©2012 Fairchild Semiconductor Corporation FDD5N50NZF Rev. C0 FDD5N50NZF 2 62.5 1 Units o C/W www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET February 2012 Device Marking FDD5N50NZF Device FDD5N50NZFTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 VDS = 400V, VGS = 0V,TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance - 1.47 1.75 Ω gFS Forward Transconductance VGS = 10V, ID = 1.85A VDS = 20V, ID = 1.85A - 4.2 - S (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V ID = 3.7A VGS = 10V (Note 4, 5) - 365 485 pF - 50 65 pF - 4 8 pF - 9 12 nC - 2 - nC - 4 - nC - 12 35 ns - 19 50 ns - 31 70 ns - 22 55 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 3.7A VGS = 10V, RGEN = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3.7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 14 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3.7A - - 1.5 V trr Reverse Recovery Time - 87 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 3.7A dIF/dt = 100A/μs - 0.15 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 23mH, IAS = 3.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3.7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD5N50NZF Rev. C0 2 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 1 0.1 ID, Drain Current[A] ID, Drain Current[A] 10 o 150 C 1 o 25 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.03 0.1 0.1 25 1 10 VDS, Drain-Source Voltage[V] 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8 50 3.2 IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 4 5 6 7 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.6 2.8 2.4 VGS = 10V VGS = 20V 2.0 1.6 10 o o 150 C 25 C *Notes: 1. VGS = 0V o *Note: TC = 25 C 1.2 0 2 4 6 ID, Drain Current [A] 8 1 0.4 10 Figure 5. Capacitance Characteristics 1.6 10 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 Ciss 400 *Note: 1. VGS = 0V 2. f = 1MHz 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 800 Capacitances [pF] o -55 C Coss 200 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDD5N50NZF Rev. C0 1 10 VDS, Drain-Source Voltage [V] *Note: ID = 3.3A 0 30 0 3 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET Typical Performance Characteristics FDD5N50NZF N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250μA 0.90 -75 -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 9. Maximum Safe Operating Area vs. Case Temperature 20 Figure 10. Maximum Drain Current 5 30μs 10 4 1ms ID, Drain Current [A] ID, Drain Current [A] 100μs 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 2 1 0.5 0.2 0.1 PDM 0.05 0.1 t2 *Notes: Single pulse o 1. ZθJC(t) = 2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 FDD5N50NZF Rev. C0 t1 0.02 0.01 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 1 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N50NZF Rev. C0 5 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDD5N50NZF Rev. C0 6 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N50NZF Rev. C0 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDD5N50NZF Rev. C0 8 www.fairchildsemi.com FDD5N50NZF N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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