FAIRCHILD FQB22P10TM_F085

QFET
®
FQB22P10TM_F085
100V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
•
•
•
•
•
•
•
•
•
-22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
Low gate charge ( typical 40 nC)
Low Crss ( typical 160 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
Qualified to AEC Q101
RoHS Compliant
D
G
S
D
G
D2-PAK
FQB Series
Absolute Maximum Ratings
Symbol
VDSS
ID
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB22P10TM_F085
-100
-22
- Continuous (TC = 100°C)
Units
V
A
-15.6
A
(Note 1)
-88
A
±30
V
710
mJ
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
-22
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
12.5
-6.0
3.75
mJ
V/ns
W
125
0.83
-55 to +175
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
1.2
Units
°C/W
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2009 Fairchild Semiconductor Corporation
FQB22P10TM_F085 Rev. A
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FQB22P10TM_F085 100V P-Channel MOSFET
February 2009
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
-100
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, Referenced to 25°C
--
-0.1
VDS = -100 V, VGS = 0 V
--
--
-1
µA
VDS = -80 V, TC = 125°C
--
--
-10
µA
Gate-Body Leakage Current, Forward
VGS = -30 V, VDS = 0 V
--
--
-100
nA
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
--
--
100
nA
-2.0
--
-4.0
V
--
0.096
0.125
Ω
--
13.5
--
S
--
1170
1500
pF
--
460
600
pF
--
160
200
pF
ns
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -11 A
gFS
Forward Transconductance
VDS = -40 V, ID = -11 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -50 V, ID = -22 A,
RG = 25 Ω
(Note 4, 5)
VDS = -80 V, ID = -22 A,
VGS = -10 V
(Note 4, 5)
--
17
45
--
170
350
ns
--
60
130
ns
--
110
230
ns
--
40
50
nC
--
7.0
--
nC
--
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-22
A
ISM
--
--
-88
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = -22 A
Drain-Source Diode Forward Voltage
--
--
-4.0
V
trr
Reverse Recovery Time
--
110
--
ns
Qrr
Reverse Recovery Charge
--
0.6
--
µC
VGS = 0 V, IS = -22 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
FQB22P10TM_F085 Rev. A
2
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FQB22P10TM_F085 100V P-Channel MOSFET
Electrical Characteristics
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
1
10
-ID , Drain Current [A]
-ID, Drain Current [A]
Top :
1
10
175℃
25℃
0
10
-55℃
0
10
※ Notes :
1. VDS = -40V
2. 250μ s Pulse Test
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
-1
-1
0
10
10
1
10
10
2
4
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
0.5
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω],
Drain-Source On-Resistance
0.4
VGS = - 10V
1
10
0.3
VGS = - 20V
0.2
0
10
0.1
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0.0
8
-1
0
10
20
30
40
50
60
-ID , Drain Current [A]
70
80
90
100
10
0.2
1500
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
1000
500
0
-1
10
0
1
10
1.6
1.8
2.0
2.2
2.4
2.6
VDS = -80V
6
4
2
※ Note : ID = -22 A
0
10
20
30
40
50
QG, Total Gate Charge [nC]
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
FQB22P10TM_F085 Rev. A
1.4
VDS = -50V
8
0
10
1.2
VDS = -20V
10
-V GS , Gate-Source Voltage [V]
Capacitance [pF]
Coss
2000
1.0
12
Ciss
2500
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.6
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3500
0.4
Figure 6. Gate Charge Characteristics
3
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FQB22P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
(Continued)
2.5
1.2
-BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = -250 μ A
0.9
0.8
-100
-50
0
50
100
150
1.5
1.0
※ Notes :
1. VGS = -10 V
2. ID = -11 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
25
Operation in This Area
is Limited by R DS(on)
2
10
20
1 ms
-I D, Drain Current [A]
-I D, Drain Current [A]
100 µs
10 ms
1
10
DC
0
10
※ Notes :
15
10
5
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10
0
1
10
0
25
2
10
10
50
100
125
150
175
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C ( t) = 1 .2 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
0 .0 1
θ JC
( t) , T h e r m a l R e s p o n s e
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [℃]
-VDS, Drain-Source Voltage [V]
t1
Z
s i n g l e p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
FQB22P10TM_F085 Rev. A
4
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FQB22P10TM_F085 100V P-Channel MOSFET
Typical Characteristics
FQB22P10TM_F085 100V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
-10V
300nF
VDS
VGS
Qgs
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
t on
td(on)
VDD
VGS
VGS
t off
tr
td(off)
tf
10%
DUT
-10V
VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
tp
ID
RG
VDD
VDD
IAS
BVDSS
tp
FQB22P10TM_F085 Rev. A
VDS (t)
ID (t)
DUT
-10V
Time
5
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FQB22P10TM_F085 100V P-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
VDS
DUT
_
I SD
L
Driver
RG
Compliment of DUT
(N-Channel)
VGS
VGS
( Driver )
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
Body Diode Reverse Current
I SD
( DUT )
IRM
di/dt
IFM , Body Diode Forward Current
VSD
VDS
( DUT )
Body Diode
Forward Voltage Drop
VDD
Body Diode Recovery dv/dt
FQB22P10TM_F085 Rev. A
6
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4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2-PAK
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
Dimensions in Millimeters
FQB22P10TM_F085 Rev. A
7
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FQB22P10TM_F085 100V P-Channel MOSFET
Package Dimensions
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Definition of Terms
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Advance Information
Formative / In Design
Preliminary
First Production
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Obsolete
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I38
FQB22P10TM_F085 Rev. A
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