STMICROELECTRONICS STD6NF10_08

STD6NF10
STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK
low gate charge STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STD6NF10
100 V
< 0.250 Ω
6A
STU6NF10
100 V
< 0.250 Ω
6A
■
Exceptional dv/dt capability
■
100% avalanche tested
3
3
2
1
IPAK
1
DPAK
Application
■
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order codes
Marking
Package
Packaging
STD6NF10T4
D6NF10
DPAK
Tape and reel
STU6NF10
6NF10
IPAK
Tube
November 2008
Rev 6
1/14
www.st.com
14
Contents
STD6NF10, STU6NF10
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
.............................................. 8
STD6NF10, STU6NF10
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
6
A
ID
Drain current (continuous) at TC = 100 °C
4
A
Drain current (pulsed)
24
A
Total dissipation at TC = 25 °C
30
W
Derating factor
0.2
W/°C
Peak diode recovery voltage slope
40
V/ns
Single pulse avalanche energy
200
mJ
-65 to 175
°C
Value
Unit
5
°C/W
IDM
(1)
Ptot
dv/dt (2)
EAS
(3)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2.
ISD ≤ 6 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
100
°C/W
Maximum lead temperature for soldering purpose
300
°C
TJ
3/14
Electrical characteristics
2
STD6NF10, STU6NF10
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
V(BR)DSS
Drain-source
breakdown voltage
ID = 250 µA, VGS =0
100
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS =max rating,
TC = 125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3 A
Table 5.
Symbol
Max.
Unit
V
1
10
µA
µA
±100
nA
4
V
0.22
0.25
Ω
Typ.
Max.
Unit
2
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = > ID(on) x
RDS(on)max, ID = 3A
34
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
280
45
20
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50 V, ID = 3 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
6
10
20
3
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80 V, ID = 6 A,
VGS = 10 V, RG = 4.7 Ω
(see Figure 14)
10
2.5
4
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/14
Typ.
14
nC
nC
nC
STD6NF10, STU6NF10
Table 6.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 6 A, VGS = 0
Reverse recovery time
ISD = 6 A, di/dt = 100 A/µs,
Reverse recovery charge VDD = 10 V, Tj = 150 °C
Reverse recovery current (see Figure 15)
70
175
5
Max.
Unit
6
24
A
A
1.3
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/14
Electrical characteristics
STD6NF10, STU6NF10
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
Figure 6.
Transconductance
Figure 7.
Static drain-source on resistance
6/14
STD6NF10, STU6NF10
Figure 8.
Electrical characteristics
Gate charge vs. gate-source voltage Figure 9.
Figure 10. Normalized gate threshold voltage
vs. temperature
Capacitance variations
Figure 11. Normalized on resistance vs.
temperature
Figure 12. Source-drain diode forward
characteristics
7/14
Test circuits
3
STD6NF10, STU6NF10
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/14
Figure 18. Switching time waveform
STD6NF10, STU6NF10
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STD6NF10, STU6NF10
TO-251 (IPAK) mechanical data
mm.
DIM.
A
min.
typ
max.
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
0.95
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
4.60
16.10
L
9.00
9.40
(L1)
0.80
1.20
L2
0.80
V1
10 o
0068771_H
10/14
STD6NF10, STU6NF10
Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
D1
E
6.20
5.10
6.40
E1
6.60
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
R
V2
1
0.20
0o
8o
0068772_G
11/14
Packing mechanical data
5
STD6NF10, STU6NF10
Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
12/14
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD6NF10, STU6NF10
6
Revision history
Revision history
Table 7.
Document revision history
Date
Revision
Changes
21-Jun-2004
3
Complete version
20-Jul-2006
4
New template, no content change
16-Sep-2008
5
Corrected part number: STU6NF10
19-Nov-2008
6
Marking label in Table 1 for the device in IPAK has been
updated.
IGSS value in Table 4 has been updated
13/14
STD6NF10, STU6NF10
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14/14