STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET Features ■ Type VDSS RDS(on) max ID STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015 Ω 80 A Exceptional dv/dt capability 3 3 1 ■ 100% Avalanche tested ■ Application oriented characterization TO-220 2 1 D²PAK Applications ■ Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary Order codes Marking Package Packaging STP80NF10 P80NF10@ TO-220 Tube STB80NF10T4 B80NF10@ D²PAK Tape and reel April 2009 Doc ID 6958 Rev 18 1/14 www.st.com 14 Contents STB80NF10, STP80NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 5 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/14 ................................................ 8 Doc ID 6958 Rev 18 STB80NF10, STP80NF10 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 80 A ID (1) Drain current (continuous) at TC = 100 °C 80 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 300 W Derating factor 2 W/°C Peak diode recovery voltage slope 7 V/ns IDM (2) PTOT dv/dt (3) EAS(4) Single pulse avalanche energy 350 mJ Tstg Tj Storage temperature Operating junction temperature -55 to 175 °C Value Unit 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 300 A/µs, VDD= 80% V(BR)DSS 4. Starting Tj = 25 °C, ID = 40 A, VDD = 50 V Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Tl Doc ID 6958 Rev 18 3/14 Electrical characteristics 2 STB80NF10, STP80NF10 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125°C 500 10 nA µA IGSS Gate-body leakage current (VDS = 0) VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 40 A 0.012 0.015 Ω Min. Typ. Max. Unit V(BR)DSS Table 5. Symbol 100 2 V Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 25 V , ID =40 A - 50 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 5500 700 175 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 50 V, ID = 80 A, VGS = 10 V 135 23 51.3 182 - nC nC nC Min. Typ. Max. Unit - 26 80 116 60 - ns ns ns ns 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 6. Symbol td(on) tr td(off) tf 4/14 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 50 V, ID= 40 A, RG = 4.7 Ω, VGS=10 V (see Figure 15) Doc ID 6958 Rev 18 STB80NF10, STP80NF10 Table 7. Symbol ISD Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current - 80 A ISDM (1) Source-drain current (pulsed) - 320 A VSD (2) Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VDD = 50 V di/dt = 100 A/µs, Tj=150 °C - trr Qrr IRRM 106 450 8.5 ns nC A 1. Pulse width limited by safe operating area 2. Pulse duration=300µs, duty cycle 1.5% Doc ID 6958 Rev 18 5/14 Electrical characteristics STB80NF10, STP80NF10 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 Doc ID 6958 Rev 18 STB80NF10, STP80NF10 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics Doc ID 6958 Rev 18 7/14 Test circuits 3 STB80NF10, STP80NF10 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 6958 Rev 18 10% AM01473v1 STB80NF10, STP80NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 6958 Rev 18 9/14 Package mechanical data STB80NF10, STP80NF10 TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/14 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 Doc ID 6958 Rev 18 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.147 0.104 0.151 0.116 STB80NF10, STP80NF10 Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M Doc ID 6958 Rev 18 11/14 Packaging mechanical data 5 STB80NF10, STP80NF10 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 12/14 Doc ID 6958 Rev 18 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB80NF10, STP80NF10 6 Revision history Revision history Table 8. Document revision history Date Revision Changes 04-Nov-2003 8 New datasheet according to PCN DSG-TRA/03/382 13-Dec-2004 9 D²PAK inserted 16-Dec-2004 10 @ inserted in table 2 for TO-220 marking 27-Jan-2005 11 New value in table 3 22-Feb-2005 12 Id value changed 28-Feb-2005 13 New value in table 3 01-Mar-2005 14 Vgs value changed 06-Apr-2006 15 The document has been reformatted 25-Jan-2007 16 Typo mistake on page 1 (order codes) 17-Nov-2008 17 EAS value has been updated 15-Apr-2009 18 IDSS value changed in Table 4: On/off states Doc ID 6958 Rev 18 13/14 STB80NF10, STP80NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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