Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain ID (A) 55 @ VGS = 10V 65 @ VGS = 4.5V 30 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) 30 4 2 IF (A) 0.51 3 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM414K34CS RL SOP-8 2.5Kpcs / 13” Reel N-Channel MOSFET with Schottky Diode MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage Continuous Drain Current, VGS VGS ID ±20 4 V A Pulsed Drain Current, a,b Continuous Source Current (Diode Conduction) o Maximum Power Dissipation @ Ta = 25 C IDM IS PD 20 4 2 A A W TJ TJ, TSTG +150 -55 ~ +150 Operating Junction Temperature Operating Junction and Storage Temperature Range o o C C Schottky Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Drain-Source Voltage Average Forward Current Non-Peak Repetitive Surge Current c VRRM IF 30 3 V A IFSM 20 A Thermal Performance Junction to Ambient Thermal Resistance RӨJA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec. C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. 1/4 62.5 o C/W Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 1.4 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = 24V, VGS = 0V IDSS -- -- 1.0 µA VDS ≥ 5V, VGS = 10V ID(ON) 30 -- -- A -- 30 45 -- 40 55 Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage Dynamic a VGS = 10V, ID = 4A VGS = 4.5V, ID = 2A RDS(ON) mΩ VDS = 5V, ID = 4A gfs -- 20 -- S IS = 4A, VGS = 0V VSD -- 1 1.2 V Qg -- 13 -- Qgs -- 4.2 -- Qgd -- 3.1 -- Ciss -- 610 -- Coss -- 100 -- Crss -- 77 -- td(on) -- 9.1 -- tr -- 16.5 -- td(off) -- 23 -- tf -- 3.5 -- Symbol Min Typ Max Unit VFM -- -- 0.51 V -- -- 0.05 -- -- 18 -- 10000 -- b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 15V, ID = 4A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω nS Schottky Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Forward Voltage Drop Conditions IF = 3A o Reverse Leakage Current Voltage Rate of Charge Notes: VR = 30V, Ta = 25 C IR o VR = 30V, Ta = 100 C VR = 30V dv/dt mA V/us a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 Mechanical Drawing DIM A B C D F G K M P R 3/4 SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Version: Preliminary Preliminary TSM414K34 30V N-Channel MOSFET with Schottky Diode Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary