FREESCALE MRF18060BLSR3

Freescale Semiconductor
Technical Data
Document Number: MRF18060B
Rev. 8, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
MRF18060BLR3
MRF18060BLSR3
Designed for PCN and PCS base station applications with frequencies from
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications. Specified for GSM 1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts CW
Efficiency — 45% (Typ) @ 60 Watts CW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 60 Watts CW
Output Power
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
1930- 1990 MHz, 60 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF18060BLR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF18060BLSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
180
1.03
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.97
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Class
2 (Minimum)
M3 (Minimum)
MRF18060BLR3 MRF18060BLSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
Vdc
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
160
—
pF
Output Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
740
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.7
—
pF
11.5
13
—
40
45
—
—
—
- 10
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μAdc)
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Common- Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz)
Gps
Drain Efficiency @ 60 W(2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz)
η
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 - 1990 MHz)
dB
%
IRL
dB
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring
batch- to - batch consistency.
MRF18060BLR3 MRF18060BLSR3
2
RF Device Data
Freescale Semiconductor
Z5
VSUPPLY
VBIAS
R1
C3
R2
C7
Z2
Z6
C6
Z3
C5
C4
C1, C3
C2
C4, C8
C5
C6
C7, C9
R1, R2
R3
Z4
C9
Z1
C2
C1
R3
RF
INPUT
+
Z7
RF
OUTPUT
C8
DUT
10 pF, 100B Chip Capacitors
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitors
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
0.3 pF, 100B Chip Capacitors
10 kΩ Chip Resistors (0805)
1.0 kΩ Chip Resistor (0805)
Z1
Z2
Z3
Z4
Z5
Z6
Z7
PCB
0.60″ x 0.09″ Microstrip
1.00″ x 0.09″ Microstrip
0.51″ x 0.94″ Microstrip
0.59″ x 0.98″ Microstrip
0.79″ x 0.09″ Microstrip
1.38″ x 0.09″ Microstrip
0.79″ x 0.09″ Microstrip
Teflon® Glass
Figure 1. 1930 - 1990 MHz Test Fixture Schematic
VBIAS
VSUPPLY
C2
R1
C1
R2
C9
C4
C3
C7
R3
C6
C5
C8
Ground
Ground
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 1930 - 1990 MHz Test Fixture Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
3
VBIAS
ÎÎÎ
ÎÎÎ
ÎÎÎ
C1
T1
R1
R5
R2
VSUPPLY
C2
C4
R3
T2
+
C3
R4
C5
R6
RF
INPUT
Z1
Z2
C6
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
Z3
Z6
Z4
RF
OUTPUT
Z5
C7
1 mF Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU - P (0805)
10 mF, 35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU - P (0805)
1 pF Chip Capacitor, ACCU - P (0805)
10 Ω Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
Z7
C8
T1
LP2951 Micro - 8 Voltage Regulator
T2
BC847 SOT - 23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon® Glass, εr = 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
MRF18060BLR3 MRF18060BLSR3
4
RF Device Data
Freescale Semiconductor
VBIAS
Ground
Î
ÎÎ
C4
R1
C1
R2
R3
R4
T2
T1
R5
C2
C3
C7
C5
R6
MRF18060
ÎÎ
ÎÎÎ
ÎÎ
Î
Î
ÎÎÎÎ
Î
Î
ÎÎ
Î
VSUPPLY
C8
C6
ÎÎ
ÎÎ
Î
ÎÎ
Î
Î
ÎÎÎ
ÎÎ
Î
ÎÎ
MRF18060
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
5
16
100
15
90
Pout , OUTPUT POWER (WATTS)
IDQ = 750 mA
13
500 mA
12
11 300 mA
10
100 mA
9
VDD = 26 Vdc
f = 1880 MHz
80
60
40
30
18
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
Pin = 6 W
70
3W
60
50
VDD = 26 Vdc
IDQ = 500 mA
30
1W
20
0.5 W
60
80
55
70
1900
Figure 7. Output Power versus Frequency
G ps, POWER GAIN (dB)
35
30
30
VDD = 26 Vdc
IDQ = 500 mA
f = 1880 MHz
20
1
3
4
2
Pin, INPUT POWER (WATTS)
0
−2
Gps
−4
13.5
−6
13.0
−8
12.5
−10
12.0
−12
11.5
−14
IRL
10.5
10.0
1700
1800
20
5
6
Figure 8. Output Power and Efficiency
versus Input Power
14.5
11.0
25
15
0
15.0
14.0
40
40
0
1880
45
Pout
50
10
1840
1860
f, FREQUENCY (MHz)
50
h
60
0
1820
30
28
90
10
1800
22
26
24
VDD, SUPPLY VOLTAGE (VOLTS)
20
Figure 6. Output Power versus Supply Voltage
90
40
VDD = 26 Vdc
IDQ = 500 mA
10
0
Figure 5. Power Gain versus
Output Power
80
1W
20
100
10
Pout, OUTPUT POWER (WATTS)
2.5 W
50
8
1
Pin = 5 W
70
η, DRAIN EFFICIENCY (%)
14
1900
f, FREQUENCY (MHz)
−16
VDD = 26 Vdc
IDQ = 500 mA
2000
IRL, INPUT RETURN LOSS (dB)
G ps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
−18
−20
2100
Figure 9. Wideband Gain and IRL
(at Small Signal)
MRF18060BLR3 MRF18060BLSR3
6
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
Zload
f = 1700 MHz
f = 1700 MHz
f = 2100 MHz
Zsource
f = 2100 MHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW
f
MHz
Zsource
Ω
Zload
Ω
1700
0.60 - j2.53
2.27 - j3.44
1800
0.80 - j3.20
2.05 - j3.05
1900
0.92 - j3.42
1.90 - j2.90
2000
1.07 - j3.59
1.64 - j2.88
2100
1.31 - j4.00
1.29 - j2.99
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF18060BLR3 MRF18060BLSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF18060BLR3 MRF18060BLSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
T A
M
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
M
T A
B
M
M
M
bbb
N
R
(INSULATOR)
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF18060BLR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF18060BLSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF18060BLR3 MRF18060BLSR3
RF Device Data
Freescale Semiconductor
11
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800- 521- 6274 or +1 - 480- 768- 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800- 441- 2447 or 303 - 675- 2140
Fax: 303 - 675- 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF18060BLR3 MRF18060BLSR3
Document Number: MRF18060B
Rev. 8, 5/2006
12
RF Device Data
Freescale Semiconductor