MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE CM50TU-24H ● IC ..................................................................... 50A ● VCES ....................................................... 1200V ● Insulated Type ● 6-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 102 4–φ5.5 MOUNTING HOLES 80 ±0.25 20 10 CM 11 E G 19.1 E GuN 11 11.85 G EuN E EuP GvN GvP EvN EvP GwN GwP G E G E G EwN E U 5–M4NUTS TC measured point 10 11 V 10 20 19.1 1.25 EwP W 20 11 10 19.1 +1 3.05 11 29 –0.5 TC measured point P 4 8.1 7.1 2.8 0.5 91 74 ±0.25 G 19.1 39.3 11 18.7 P N GuP (4) 1.25 10 26 LABEL GuP EuP GvP EvP GwP EwP U V W GuN EuN GvN EvN GwN EwN N CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) Ratings Unit 1200 ±20 50 100 50 100 400 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 5mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.9 2.85 — — — 187 — — — — — — 0.28 — — 0.5 3.7 — 7.5 2.6 1.5 — 80 200 150 350 3.2 300 — 0.31 0.7 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.11 — K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 50A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3Ω Resistive load IE = 50A, VGE = 0V IE = 50A, die / dt = –100A / µs Junction to case, IGBT part (Per 1/6 module) Junction to case, FWDi part (Per 1/6 module) Case to heat sink, conductive grease applied (Per 1/6 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 100 15 VCE = 10V COLLECTOR CURRENT IC (A) 12 Tj = 25°C 75 11 50 10 9 25 8 0 0 2 4 6 8 50 25 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 5 25 0 50 75 Tj = 25°C 8 6 IC = 100A 4 IC = 50A IC = 20A 2 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 101 Tj = 25°C 2 102 7 5 3 2 101 7 5 10 0 100 3 EMITTER CURRENT IE (A) 75 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 20 (V) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 100 7 5 Cies 3 2 100 7 5 3 2 Coes Cres 10–1 7 5 3 2 3.5 VGE = 0V 10–2 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.0 1.5 2.0 2.5 3.0 Feb. 2009 3 MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE tf 3 2 td(off) 102 7 5 td(on) tr 3 2 101 7 5 VCC = 600V VGE = ±15V RG = 6.3Ω 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 0 10 2 3 5 7 101 2 2 5 3 3 2 2 trr 102 7 5 Irr 3 2 2 3 5 7 101 100 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Per unit base = Rth(j – c) = 0.31K/W 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 7 5 2 EMITTER CURRENT IE (A) 7 5 3 2 101 3 COLLECTOR CURRENT IC (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 100 5 101 0 10 5 7 102 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 Tj = 125°C 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 100A /µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.7K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 50A 15 VCC = 400V VCC = 600V 10 5 0 0 50 100 150 200 250 GATE CHARGE QG (nC) Feb. 2009 4