KSC2223 KSC2223 High Frequency Amplifier • • • • Very small size to assure good space factor in Hybrid IC applications fT=600MHz (TYP) at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 20 V Emitter-Base Voltage 4 V IC Collector Current 20 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=30V, IE=0 Min. hFE DC Current Gain VCE=6V, IC=1mA VCE (sat) Collector Emitter Saturation Voltage IC=10mA, IB=1mA 40 Cob Output Capacitance VCB=6V, IE=0, f=1MHz fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cc·rbb Time Constant VCB=6V, IC=1mA f=31.9MHz NF Noise Figure VCE=6V, IC=1mA f=100MHz, RS=50Ω 400 Typ. Max. 0.1 90 180 0.1 0.3 Units µA V 1 pF 600 MHz 12 ps 3 dB hFE Classification Classification R O Y hFE 40 ~ 80 60 ~ 120 90 ~ 180 Marking H5 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 KSC2223 Typical Characteristics 1000 10 8 IB = 70µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 6V IB = 80µA IB = 60µA 6 IB = 50µA IB = 40µA 4 IB = 30µA IB = 20µA 2 100 IB = 10µA 10 0.1 0 0 4 8 12 16 20 1000 hFE, DC CURRENT GAIN IC = 1mA 100 10 10 IC = 10 IB 1 VCE(sat) 0.01 0.1 100 100 10 1 0.8 1.0 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation 1.2 Cc.rbb[ps], COLLECTOR-BASE TIME CONSTANT IC[mA], COLLECTOR CURRENT VCE = 6V 0.6 10 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 0.4 1 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain 2 0.2 VBE(sat) 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 0.1 0.0 100 Figure 2. DC current Gain 1 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic 10 10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 1 1 100 VCB = 6V f = 31.9MHz 10 1 0.1 1 10 100 IE[mA], EMITTER CURRENT Figure 6. Collector-Base Time Constant Rev. A3, September 2002 KSC2223 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Typical Characteristics (Continued) 24 VCE = 6V f = 100MHz NF[dB], NOISE FIGURE 20 16 12 8 4 0 0.1 1 10 10000 VCE = 6V 1000 100 0.1 1 100 IE[mA], EMITTER CURRENT IE[mA], EMITTER CURRENT Figure 7. Noise Figure Figure 8. Current Gain Bandwidth Product 10 200 f = 1MHz 180 PC[mW], POWER DISSIPATION Cie[pF], INPUT CAPACITANCE Cob[pF], OUTPUT CAPACITANCE 10 Cie (IC=0) Cob (IE=0) 1 160 140 120 100 80 60 40 20 0.1 0.1 1 10 100 0 0 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Figure 9. Input and Output Capacitance ©2002 Fairchild Semiconductor Corporation 25 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE Figure 10. Power Derating Rev. A3, September 2002 KSC2223 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1