2SK2405 Ordering number : EN8603 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2405 General-Purpose Switching Device Applications Features • • Built-in FRD. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS ID IDP Unit 450 V ±30 V 10 A 40 A 1.65 W Allowable Power Dissipation PD 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions Ratings min typ max Unit V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=450V, VGS=0V VGS= ±30V, VDS=0V 450 VGS(off) ⏐yfs⏐ VDS=10V, ID=1mA 2.0 Input Capacitance RDS(on) Ciss 1500 pF Output Capacitance Coss ID=6A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz 220 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 75 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance VDS=10V, ID=6A V 1.0 ±100 3 3.0 6 0.55 mA nA V S 0.75 Ω Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 30310QB TK IM TA-0151 No.8603-1/4 2SK2405 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 22 ns Rise Time tr See specified Test Circuit. 60 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 230 ns Fall Time tf See specified Test Circuit. 75 ns Diode Forward Voltage VSD Diode Reverse Recovery Time trr IS=10A, VGS=0V IS=10A, di / dt=100A / μs 150 Package Dimensions Package Dimensions unit : mm(typ) 7513-002 unit : mm(typ) 7001-003 4.5 0.2 0.8 1 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : SMP 1.4 0.4 2.55 2.7 3 2.55 0 to 0.3 1.2 2.7 2 3 0.8 2.55 1 2 1.35 3.0 0.4 8.8 1.5MAX 9.9 8.8 11.0 1.2 (9.4) 1.3 1.6 20.9 11.5 1.3 V ns 4.5 10.2 0.2 10.2 1.5 195 1 : Gate 2 : Drain 3 : Source 2.55 SANYO : SMP-FD Switching Time Test Circuit VDD=200V VGS=10V RL 33.3Ω ID 6A VOUT PW=1μs D.C.≤0.5% 2SK2405 P.G RGS 50Ω No.8603-2/4 2SK2405 ID -- VDS 18 VDS=10V 18 16 10V 7V 6V 12 10 8 6 5V 4 25°C 14 75°C 12 10 8 6 4 VGS=4V 2 2 0 0 0 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 0 10 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.9 0.8 0.7 ID=12A 6A 0.5 3A 0.4 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V VDS=10V 10 7 5 3 °C -25 =- 2 Tc C 75° C 25° 1.0 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 1.0 0.8 0.6 0.4 --25 0 10 7 5 50 75 100 125 150 IT08376 VGS(off) -- Tc 5 VDS=10V ID=1mA 4 3 2 1 0 --50 --25 0 25 50 75 100 125 Case Tamperature, Tc -- °C IT08377 VGS=0V 25 Case Tamperature, Tc -- °C 3 IS -- VSD 5 3 2 20 IT08374 1.2 IT08375 Gate-to-Source Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, ⏐yfs⏐ -- S 20 ⏐yfs⏐ -- ID 2 15 ID=6A VGS=10V 0.2 --50 0.3 0 10 RDS(on) -- Tc 1.4 Tc=25°C 0.6 5 Gate-to-Source Voltage, VGS -- V IT08373 RDS(on) -- VGS 1.0 150 IT08378 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 Ciss, Coss, Crss -- pF 3 3 2 5°C 25° C --25 °C 1.0 7 5 Tc= 7 Source Current, IS -- A Tc= --25°C 16 Drain Current, ID -- A 14 Drain Current, ID -- A ID -- VGS 20 3 2 0.1 7 5 3 2 2 Ciss 1000 7 5 Coss 3 2 Crss 100 7 5 3 0.01 0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V 1.2 1.4 IT08379 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT08380 No.8603-3/4 2SK2405 ASO Drain Current, ID -- A 3 2 ID=10A 10 7 5 1m s 10 3 2 DC 1.0 7 5 3 2 10 ms 0m s op era tio n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 1.0 2 3 1.65 1.50 1.00 0.50 0 5 7 10 2 3 5 7 100 2 Drain-to-Source Voltage, VDS -- V 3 5 7 IT08381 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT08382 PD -- Tc 90 Allowable Power Dissipation, PD -- W PD -- Ta 2.00 <1μs 10 μs 10 0μ s IDP=40A Allowable Power Dissipation, PD -- W 7 5 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Tamperature, Tc -- °C 140 160 IT08383 Note on usage : Since the 2SK2405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.8603-4/4