SFT1403 Ordering number : ENA0786 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SFT1403 General-Purpose Switching Device Applications Features • • • Motor drive application. Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 Gate-to-Source Voltage VGSS ±20 V ID 14 A Drain Current (DC) Drain Current (PW≤10µs) IDP PW≤10µs, duty cycle≤1% V 56 A 1.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : T1403 Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=35V, VGS=0V VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=7A RDS(on)1 RDS(on)2 ID=7A, VGS=10V ID=7A, VGS=4V Ratings min typ Unit max 35 V 1.2 6.6 1 µA ±10 µA 2.6 11 V S 17 23 mΩ 25 35 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41807PA TI IM TC-00000594 No. A0786-1/4 SFT1403 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Ratings Conditions min typ VDS=20V, f=1MHz VDS=20V, f=1MHz Unit max 2230 pF 305 pF VDS=20V, f=1MHz See specified Test Circuit. 225 pF 21 ns 110 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) See specified Test Circuit. See specified Test Circuit. 140 ns tf See specified Test Circuit. 100 ns 39 nC 7.7 nC Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=20V, VGS=10V, ID=14A VDS=20V, VGS=10V, ID=14A Gate-to-Drain “Miller” Charge Qgd VDS=20V, VGS=10V, ID=14A Diode Forward Voltage VSD IS=14A, VGS=0V 7.2 0.92 Package Dimensions Package Dimensions unit : mm (typ) 7518-004 unit : mm(typ) 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 2.3 6.5 5.0 0.5 0.5 0.6 1 2 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.8 1 7.5 0.8 1.6 0.85 1.2 SANYO : TP V 7.0 2.3 6.5 5.0 nC 1.2 1.2 Turn-OFF Delay Time 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Switching Time Test Circuit VDD=20V VIN 10V 0V ID=7A RL=2.86Ω VOUT VIN D PW=10µs D.C.≤1% G P.G 50Ω S SFT1403 No. A0786-2/4 SFT1403 ID -- VDS 6.0V 4.0 4 2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 40 30 20 10 4 5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V 15 16 Source Current, IS -- A °C -25 = °C Ta 75 7 5 3 2 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 20 40 60 80 100 120 140 160 IT12354 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.4 0.6 0.8 1.0 1.2 IT12356 Ciss, Coss, Crss -- VDS f=1MHz Ciss Ciss, Coss, Crss -- pF 100 tf 5 tr 3 0 3 td(off) 7 --20 5 3 2 --40 Diode Forward Voltage, VSD -- V VDD=20V VGS=10V 4.0 IT12352 10 IT12355 SW Time -- ID 5 20 0.01 7 5 3 2 0.001 0.2 1.0 5 0.1 3.5 7A I = 4V, D = VGS 7A , I D= =10V VGS 30 3 2 2 10 3.0 Ambient Temperature, Ta -- °C VDS=10V °C 25 2.5 40 IT12353 yfs -- ID 3 2.0 RDS(on) -- Ta 0 --60 0 3 1.5 50 Ta=25°C ID=7A 2 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 60 0.5 IT12351 --25° C 0.3 25° C 0.2 Ta= 75° C 0.1 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 0 0 Forward Transfer Admittance, yfs -- S 6 2 VGS=2.5V 0 Switching Time, SW Time -- ns 8 25° C --25 °C 3.0V 6 10 5°C 8 12 3.3V Ta =7 10 VDS=10V 5V Drain Current, ID -- A Drain Current, ID -- A 12 ID -- VGS 14 3. V 16.0V 10.0V 8.0V 14 td(on) 2 2 1000 7 5 Coss 3 Crss 2 10 7 0.1 100 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT12357 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 IT12358 No. A0786-3/4 SFT1403 VGS -- Qg 10 VDS=20V ID=14A 7 6 5 4 3 2 0 5 10 15 20 25 30 Total Gate Charge, Qg -- nC 35 40 No he at 0.6 DC 3 2 sin k 0.4 0.2 s op era Operation in this area is limited by RDS(on). tio n 1.0 7 5 Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 0.8 ms 0m 5 7 IT12360 PD -- Tc 25 1.0 10 10 IT12359 PD -- Ta 1.2 s 100 µs ID=14A 0.1 0.1 0 10µs 1m 10 7 5 3 2 1 Allowable Power Dissipation, PD -- W IDP=56A 3 2 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 100 7 5 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12349 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT12361 Note on usage : Since the SFT1403 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice. PS No. A0786-4/4