CENTRAL CPD07

PROCESS
CPD07
Central
General Purpose Rectifier
TM
Semiconductor Corp.
8 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process
GLASS PASSIVATED MESA
Die Size
98 x 98 MILS
Die Thickness
10.4 MILS
Anode Bonding Pad Area
82.5 x 82.5 MILS
Top Side Metalization
Au - 5,000Å
Back Side Metalization
Au - 2,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,170
PRINCIPAL DEVICE TYPES
CR6A2GPP Series
BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (16-September 2003)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD07
Typical Electrical Characteristics
R2 (16-September 2003)