CPQ090 PROCESS TRIAC 4.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 90 x 90 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 61 x 48 MILS Gate Bonding Pad Area 11 x 9.8 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,310 PRINCIPAL DEVICE TYPES 2N6075A CQ202-4MS CQ223-4M CQD-4M BACKSIDE MT2 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) PROCESS CPQ090 Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005)