HITACHI BRA114ETP

BRA144ETP Series
PNP Built-in Resistor Transistor TO–92 Series
Inverter, Driver, Switching
ADE-208-1446B (Z)
Rev.2
Sep. 2001
Features
• Built–in Resistor Type
• Simplifies Circuit Design
• Reduces Board Space
• Complementary pair with BRC144ETP series
Outline
TO–92
2
R1
3
R2
3
2
1
1. Ground (Emitter)
2. Output (Collector)
3. Input (Base)
Note: Input resistance is shown in below
Device
R1 (kΩ
Ω)
R2 (kΩ
Ω)
BRA144ETP
47
47
BRA124ETP
22
22
BRA114ETP
10
10
BRA143ETP
4.7
4.7
BRA123ETP
2.2
2.2
1
BRA144ETP Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Supply voltage
VCC
–50
V
VI
+10 to –50
V
Input voltage
BRA144ETP
BRA124ETP
+10 to –50
BRA114ETP
+10 to –50
BRA143ETP
+10 to –35
BRA123ETP
+10 to –24
Output current
IO
–100
mA
Total power dissipation
PT
400
mW
Storage temperature
Tstg
−55 to +150
°C
Rev.2, Sep. 2001, page 2 of 12
BRA144ETP Series
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Input on voltage BRA144ETP
VI(on)
–1.5

–4.5
V
BRA124ETP
–1.3

–3.0
VCC = –0.3 V,
IO = –5 mA
BRA114ETP
–1.2

–2.4
BRA143ETP
–1.1

–2.0
V
VCC = –5 V,
IO = –100 µA
–1.1

–1.8
–1.0

–1.5
BRA124ETP
–1.0

–1.5
BRA114ETP
–1.0

–1.5
BRA143ETP
–1.0

–1.5
BRA123ETP
–1.0

–1.5
BRA123ETP
Input off voltage BRA144ETP
VI(off)
Output saturation current
VO(on)


–0.3
V
IO = –10 mA,
II = –0.5 mA
Output cutoff current
IO(off)


–0.5
µA
VCC = –50 V, II = 0
DC current
transfer ratio
Gi
70


BRA124ETP
56


BRA114ETP
30


BRA143ETP
20


VCC = –5 V, IO = –10 mA
BRA123ETP
20


VCC = –5 V, IO = –20 mA
33
47
61
BRA144ETP
Input resistance BRA144ETP
Resistance ratio
R1
BRA124ETP
15
22
28
BRA114ETP
7
10
13
BRA143ETP
3.3
4.7
6.1
BRA123ETP
1.5
2.2
2.8
0.8
1.0
1.2
R1/R2
VCC = –5 V, IO = –5 mA
kΩ
Rev.2, Sep. 2001, page 3 of 12
BRA144ETP Series
Total Power Dissipation Curve
Total Power Dissipation PT (mW)
800
600
400
200
0
50
100
150
Ambient Temperature Ta (°C)
Rev.2, Sep. 2001, page 4 of 12
200
BRA144ETP Series
Main Characteristics (BRA144ETP)
Output Current vs. Supply Voltage
–0.6
–0.5
–60
–0.4
–40
–0.3
–0.2
–20
DC Current Gain vs. Output Current
VCC = –5 V
RL = 0
Pulse test
–1
–2
–3
–4
Supply Voltage VCC (V)
25˚C
Ta = –25˚C
Output Current IO (mA)
–10
–10
Ta = –25 ˚C
–1.0
25 ˚C
75˚C
–0.1
–0.1
–1.0
–10
Output Current IO (mA)
0
–1
–5
Input Voltage vs. Output Current
VCC = –0.3 V
RL = 0
Pulse test
–100
75˚C
100
II = –0.1 mA
–100
VI (V)
200
DC Current Gain Gi
–80
0
Input Voltage
–1.0
–0.9
–0.8
–0.7
RL = 0
Pulse test
Output On Voltage VO(on) (V)
Output Current IO (mA)
–100
–1.0
–0.1
–10
Output Current IO (mA)
Output Current vs. Input Voltage
VCC = –5 V
RL = 0
Pulse test
75˚C
–0.01
–0.001
0
–100
25˚C
Ta = –25˚C
–0.5 –1.0 –1.5 –2.0
Input Voltage VI (V)
–2.5
Output On Voltage vs. Output Current
–1.0
IO / II = 20
Pulse test
Ta = –25 ˚C
–0.1
25 ˚C
75 ˚C
–0.01
–0.001
–0.1
–1.0
–10
–100
Output Current IO (mA)
Rev.2, Sep. 2001, page 5 of 12
BRA144ETP Series
Main Characteristics (BRA124ETP)
Output Current vs. Supply Voltage
DC Current Gain vs. Output Current
200
–1.0
–0.9
–0.8
–0.7
RL = 0
Pulse test
–80
DC Current Gain Gi
Output Current IO (mA)
–100
–0.6
–60
–0.5
–0.4
–40
–0.3
–0.2
–20
VCC = –5 V
RL = 0
Pulse test
100
25 ˚C
II = –0.1 mA
0
–1
–2
–3
–4
Supply Voltage VCC (V)
Ta = –25 ˚C
0
–1
–5
Input Voltage vs. Output Current
–10
VCC = –0.3 V
RL = 0
Pulse test
Output Current IO (mA)
Input Voltage
VI (V)
–100
75 ˚C
–10
Ta = –25 ˚C
25 ˚C
–1.0
75 ˚C
–1.0
–10
Output Current IO (mA)
–100
Output Current vs. Input Voltage
VCC = –5 V
RL = 0
Pulse test
–0.1
75 ˚C
25 ˚C
–0.01
Ta = –25 ˚C
–1.0
–10
Output Current IO (mA)
Output On Voltage VO(on) (V)
–0.1
–0.1
–100
–0.5 –1.0 –1.5 –2.0
Input Voltage VI (V)
Output On Voltage vs. Output Current
–1.0
IO / II = 20
Pulse test
Ta = –25 ˚C
–0.1
75 ˚C
25 ˚C
–0.01
–0.001
–0.1
Rev.2, Sep. 2001, page 6 of 12
–0.001
0
–1.0
–10
–100
Output Current IO (mA)
–2.5
BRA144ETP Series
Main Characteristics (BRA114ETP)
Output Current vs. Supply Voltage
DC Current Gain vs. Output Current
200
RL = 0
Pulse test
–1.0
–0.9
–0.8
–80
DC Current Gain Gi
Output Current IO (mA)
–100
–0.7
–60
–0.6
–0.5
–40
–0.4
–0.3
–20
0
–1
–2
–3
–4
Supply Voltage VCC (V)
100
25 ˚C
Ta = –25 ˚C
0
–1
–5
Input Voltage vs. Output Current
–10
Output Current IO (mA)
VCC = –0.3 V
RL = 0
Pulse test
–10
Ta = –25 ˚C
–1.0
25 ˚C
–0.1
–0.1
75 ˚C
–1.0
–10
Output Current IO (mA)
Output On Voltage VO(on) (V)
VI (V)
Input Voltage
75 ˚C
–0.2
II = –0.1 mA
–100
VCC = –5 V
RL = 0
Pulse test
–1.0
–100
Output Curent vs. Input Voltage
VCC = –5 V
RL = 0
Pulse test
–0.1
75 ˚C
–0.01
–0.001
0
–100
–10
Output Current IO (mA)
25 ˚C
Ta = –25 ˚C
–0.5 –1.0 –1.5 –2.0
Input Voltage VI (V)
–2.5
Output On Voltage vs. Output Current
–1.0
IO / II = 20
Pulse test
Ta = –25 ˚C
–0.1
25 ˚C
75 ˚C
–0.01
–0.001
–0.1
–1.0
–10
–100
Output Current IO (mA)
Rev.2, Sep. 2001, page 7 of 12
BRA144ETP Series
Main Characteristics (BRA143ETP)
Output Current vs. Supply Voltage
DC Current Gain vs. Output Current
200
RL = 0
Pulse test
–1.0
–0.9
–0.8
–80
DC Current Gain Gi
Output Current IO (mA)
–100
–0.7
–0.6
–60
–0.5
–40
–0.4
–20
–0.3
VCC = –5 V
RL = 0
Pulse test
75 ˚C
100
25 ˚C
Ta = –25 ˚C
II = –0.2 mA
0
0
–1
–5
Input Voltage vs. Output Current
–10
VCC = –0.3 V
RL = 0
Pulse test
Output Current IO (mA)
Input Voltage
VI (V)
–100
–1
–2
–3
–4
Supply Voltage VCC (V)
–10
Ta = –25 ˚C
–1.0
75 ˚C
–1.0
–0.1
–10
Output Current IO (mA)
–100
Output Current vs. Input Voltage
VCC = –5 V
RL = 0
Pulse test
75 ˚C
25 ˚C
Ta = –25 ˚C
–0.01
25 ˚C
–0.1
–0.1
–1.0
–10
Output Current IO (mA)
Output On Voltage VO(on) (V)
–1.0
–100
–0.5 –1.0 –1.5 –2.0
Input Voltage VI (V)
Output On Voltage vs. Output Current
IO / II = 20
Pulse test
25 ˚C
–0.1
75 ˚C
Ta = –25 ˚C
–0.01
–0.001
–0.1
Rev.2, Sep. 2001, page 8 of 12
–0.001
0
–1.0
–10
–100
Output Current IO (mA)
–2.5
BRA144ETP Series
Main Characteristics (BRA123ETP)
Output Current vs. Supply Voltage
DC Current Gain vs. Output Curent
200
RL = 0
Pulse test
–1.2
–1.1
–1.0
–0.9
–80
–60
DC Current Gain Gi
Output Current IO (mA)
–100
–0.8
–0.7
–40
–0.6
–0.5
–20
VCC = –5 V
RL = 0
Pulse test
75 ˚C
100
25 ˚C
Ta = –25 ˚C
II = –0.4 mA
0
0
–1
–5
Input Voltage vs. Output Current
–10
Output Current IO (mA)
VCC = –0.3 V
RL = 0
Pulse test
–10
Ta = –25 ˚C
–1.0
25 ˚C
75 ˚C
–0.1
–0.1
–1.0
–0.1
–10
Output Current IO (mA)
–100
Output Current vs. Input Voltage
VCC = –5 V
RL = 0
Pulse test
75 ˚C
25 ˚C
–0.01
Ta = –25 ˚C
–1.0
–10
Output Current IO (mA)
Output On Voltage VO(on) (V)
Input Voltage
VI (V)
–100
–1
–2
–3
–4
Supply Voltage VCC (V)
–0.001
0
–100
–0.5 –1.0 –1.5 –2.0
Input Voltage VI (V)
–2.5
Output On Voltage vs. Output Current
–1.0
IO / II = 20
Ta = –25 ˚C
Pulse test
–0.1
25 ˚C
75 ˚C
–0.01
–0.001
–0.1
–1.0
–10
–100
Output Current IO (mA)
Rev.2, Sep. 2001, page 9 of 12
BRA144ETP Series
Taping Specification
Purchasing Identification Code: Type No. + Grade + TZ
The tape is held in every 25 pitches to a hold box.
Packing quantity is 2500 pieces.
Max 25 pie
ces/1 line
More than
4 pieces
removed
H
E
D
B
W
Rev.2, Sep. 2001, page 10 of 12
W
H
D
336
262
47
Unit: mm
BRA144ETP Series
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
2.3 Max
0.7
0.60 Max
0.55 Max
12.7 Min
5.0 ± 0.2
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Rev.2, Sep. 2001, page 11 of 12
BRA144ETP Series
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.2, Sep. 2001, page 12 of 12