HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 Tab 1 2 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3 D H01N60 Series Symbol: G S • 1A, 600V, RDS(on)=8Ω@VGS=10V • Low Gate Charge 15nC(Typ.) • Low Crss 4pF(Typ.) • Fast Switching • Improved dv/dt Capability Absolute Maximum Ratings Symbol VDSS ID Parameter Drain-Source Voltage Drain Current (Continuous TC=25oC) o Drain Current (Continuous TC=100 C) *1 H01N60I / H01N60J Units 600 V 1 A 0.6 A 4 A IDM Drain Current (Pulsed) VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C) 50 mJ IAR Avalanche Current *1 1 A EAR Repetitive Avalanche Energy 2.8 mJ 4.5 V/nS dv/dt VGS Peak Diode Recovery dv/dt *2 ±20 V o 2.5 W o 28 W 0.22 W/°C -55 to +150 °C 300 °C Gate-to-Source Voltage (Continue) Total Power Dissipation (TA=25 C) PD Total Power Dissipation (TC=25 C) Derate above 25°C Tj, Tstg TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds *1: Repetitive Rating : Pulse width limited by maximum junction temperature *2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25oC H01N60I, H01N60J HSMC Product Specification HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 2/5 MICROELECTRONICS CORP. Thermal Characteristics Symbol Parameter Value Units RθJC Thermal Resistance Junction to Case Max. 4.5 °C/W RθJA Thermal Resistance Junction to Ambient Max. 110 °C/W ELectrical Characteristics (TJ=25°C, unless otherwise specified) Symbol Characteristic Min. Typ. Max. Unit 600 - - V Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced to 25oC) - 0.6 - V/oC Zero Gate Voltage Drain Current (VDS=600V, VGS=0V) - - 1 uA Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C) - - 50 uA IGSSF Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V) - - 100 nA IGSSR Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V) - - -100 nA 2 - 4 V - - 8 Ω - 0.75 - S - 210 250 - 19 25 - 4 8 - - 30 VDD=300V, ID=1.1A - - 60 *3 - - 45 - - 75 - 15 20 - 4 - - 3 - • Off Characteristics VDSS ∆BVDSS/∆TJ IDSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) • On Characteristics VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3 gFS Forward Transconductance (VDS=40V, ID=0.5A) *3 • Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz pF • Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge RG=25Ω VDS=480V, ID=1.1A VGS=10V *3 ns nC • Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 1 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 4 A VSD Drain-Source Diode Forward Voltage (VGS=0V, IS=1A) - - 1.4 V - 190 - ns - 0.53 - nC trr Qrr Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3 Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3 *3: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H01N60I, H01N60J HSMC Product Specification HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 3/5 MICROELECTRONICS CORP. TO-252 Dimension Marking: M A a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None F J 0 1 N 6 0 C Date Code Control Code Note: Green label is used for pb-free packing G Pin Style: 1.Gate 2.Drain 3.Source 2 1 N 3 H a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 a2 L Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J Marking: A B C D a1 M F Pb Free Mark Pb-Free: " . " (Note) H Normal: None a1 y1 E Date Code y1 Pin Style: 1.Gate 2.Drain 3.Source y1 H N K L a2 a1 O a2 y2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J H01N60I, H01N60J Control Code Note: Green label is used for pb-free packing GI J J 0 1 N 6 0 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm HSMC Product Specification HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 4/5 MICROELECTRONICS CORP. TO-251 Dimension A a1 F Tab DIM A C F G H1 K K1 L M a1 a2 Marking: M Pb Free Mark Pb-Free: " . " (Note) H Normal: None C I 0 1 N 6 0 Date Code G Control Code Note: Green label is used for pb-free packing 1 2 3 Pin Style: 1.Gate 2.Drain 3.Source L K H1 a1 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 6.35 4.80 1.30 5.40 6.75 0.50 0.40 0.90 2.20 0.40 - Max. 6.80 5.50 1.70 6.25 8.00 0.90 0.90 1.50 2.40 0.65 *2.30 *: Typical, Unit: mm K1 a2 3-Lead TO-251 Plastic Package HSMC Package Code: I a2 A B C D a1 DIM A B C D E F G H H1 I J K K1 M a1 a2 y1 y2 Marking: M Pb Free Mark F Pb-Free: " . " (Note) H Normal: None a1 y1 I 0 1 N 6 0 E G I y1 y1 H1 K1 a2 y2 Pin Style: 1.Gate 2.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J a2 Control Code Note: Green label is used for pb-free packing H K Date Code a1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.20 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 *1.80 *9.30 *16.10 *0.80 0.96 *0.76 2.40 0.60 2.50 5o 3o *: Typical, Unit: mm 3-Lead TO-251 Plastic Package HSMC Package Code: I Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H01N60I, H01N60J HSMC Product Specification HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec 100oC 150oC Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) o 150 C 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H01N60I, H01N60J o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification