HSMC H12N60

HI-SINCERITY
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 1/4
MICROELECTRONICS CORP.
H12N60F
H12N60F
N-Channel Power MOSFET (600V,12A)
Applications
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
1
2
3
3-Lead TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
H12N60F Series Symbol
Features
D
• H10N60F is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
G
• Advanced termination scheme to provide enhanced voltageblocking capability
S
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
600
V
12
A
7.6
A
Drain-Source Voltage
o
ID
Continuous Drain Current ([email protected], TC=25 C)
o
Continuous Drain Current ([email protected], TC=100 C)
*1
IDM
Pulsed Drain Current
40
A
VGS
Gate-to-Source Voltage
±30
V
Total Power Dissipation (TC=25oC)
PD
Linear Derating Factor
EAS
IAR
EAR
TO-220AB
175
TO-220FP
50
TO-220AB
1.43
TO-220FP
0.41
Single Pulse Avalanche Energy*2
*1
Avalanche Current
*1
Repetitive Avalanche Energy
W
W/°C
68
mJ
12
A
66
mJ
TJ
Operating Junction Temperature Range
-55 to 150
°C
Tstg
Storage Temperature Range
-55 to 150
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A
*3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case (Max.)
RθJA
Thermal Resistance Junction to Ambient (Max.)
H10N60F
Value
Units
TO-220AB
1.3
TO-220FP
5
62
°C/W
°C/W
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 2/4
MICROELECTRONICS CORP.
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
V(BR)DSS
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temp. Coefficient
Reference to 25oC, ID=1mA
-
0.58
-
V/oC
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current
VDS=400V, VGS=0V, Tj=125°C
60
uA
IGSSF
Gate-Source Forward Leakage
Vgsf=30V, VDS=0V
-
-
100
nA
IGSSR
Gate-Source Reverse Leakage
Vgsr=-30V, VDS=0V
-
-
-100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
*4
-
-
0.8
Ω
5
-
S
-
1830
-
-
157
-
ΔV(BR)DSS/ΔT
J
IDSS
RDS(on)
Static Drain-Source On-Resistance
VGS=10V, ID=6.0A
gFS
Forward Transconductance
VDS=40V, ID=6.0A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
2.2
-
td(on)
Turn-on Delay Time
-
50
-
-
50
-
-
311
-
-
55
-
-
52
-
10
-
19
Min.
Typ.
tr
td(off)
tf
Rise Time
Turn-off Delay Time
VDS=25V, VGS=0V, f=1MHz
(VDD=325V, ID=12A, RG=4.7Ω,
RD=32Ω)*4
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(VDS=520V, ID=12A, VGS=10V)
*4
pF
ns
nC
Source-Drain Diode
Symbol
IS
VSD
Characteristic
Max. Units
Continuous Source Current
(Body Diode)
Page1 MOSFET symbol showing the
integral reverse P-N junction diode.
-
-
12
A
Diode Forward Voltage
IS=12A, VGS=0V, TJ=25°C*4
-
-
1.4
V
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
*5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS
H10N60F
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 3/4
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
E
C
D
H
K
M
I
3
G
N
2
O
P
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Note: Green label is used for pb-free packing
J
L
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
E O
C
D
α3
α2
α5
Note: Green label is used for pb-free packing
G
Pin Style: 1.Gate 2.Drain 3.Source
I
J
N
3
2
F
K
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
M
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
α1/2/4/5
L
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
o
*5
Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H10N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H10N60F
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification