MCH6731 Ordering number : ENN7708 MCH6731 PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications Features • • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitatiing high-density mounting. Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [TR] Collector-to-Base Voltage VCBO --15 V Collector-to-Emitter Voltage VCEO --12 V Emitter-to-Base Voltage VEBO --5 V IC --1 A Collector Current Collector Current (Pulse) ICP PC Collector Dissipation Mounted on a ceramic board (600mm2✕0.8mm) --2 A 0.85 W 150 °C --55 to +125 °C VRRM VRSM 15 V 15 V IO 0.5 A Junction Temperature Tj Storage Temperature Tstg [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current 2 A Junction Temperature IFSM Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : PF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 63004 TS IM TB-00000071 No.7708-1/5 MCH6731 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [TR] Collector Cutoff Current ICBO VCB=--12V, IE=0 --0.1 µA Emitter Cutoff Current IEBO hFE VEB=--4V, IC=0 --0.1 µA DC Current Gain Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time Fall Time ton tstg tf VCE=--2V, IC=--10mA VCE=--2V, IC=--50mA 300 VCB=--10V, f=1MHz IE=--10µA, IC=0 See specified Test Circuit. MHz 6 IC=--400mA, IB=--20mA IC=--400mA, IB=--20mA IC=--10µA, IE=0 IC=--1mA, RBE=∞ 700 450 pF --120 --180 mV --0.9 --1.2 V --15 V --12 V --5 V 30 ns See specified Test Circuit. 75 ns See specified Test Circuit. 15 ns [Di] Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current Interterminal Capacitance IR C VR=6V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 12 V 0.40 0.45 V 90 µA 13 pF 10 ns 0.25 Package Dimensions unit : mm 2191A 0.3 5 6 3 2 0.65 1 0.15 0.07 1.6 0.25 2.1 4 2.0 6 5 4 1 2 3 0.85 (Bottom view) (Top view) 1 : Base 2 : Emitter 3 : Anode 4 : Common(Collector/Cathode) 5 : Common(Collector/Cathode) 6 : Common(Collector/Cathode) SANYO : MCPH6 Electrical Connection 6 5 4 1 : Base 2 : Emitter 3 : Anode 4 : Common(Collector/Cathode) 5 : Common(Collector/Cathode) 6 : Common(Collector/Cathode) 1 2 3 Top view No.7708-2/5 MCH6731 Switching Time Test Circuit trr Specified Circuit [TR] [Di] IB1 RB VR 100Ω 10Ω 10µs + + 220µF 470µF 50Ω 50Ω RL 100mA 100mA INPUT Duty≤10% OUTPUT IB2 10mA PW=20µs D.C.≤1% --5V VBE=5V trr VCC= --5V IC=20IB1= --20IB2= --400mA IC -- VCE [TR] VCE= --2V --7mA --1000 --600 --3mA --500 --2mA --400 --300 --1mA --200 --0.5mA --800 --600 --400 --200 C --700 --25° --5mA 5°C 25 °C --800 IC -- VBE --1200 Ta= 7 A --30 m A mA A m --10 5 --1 --20 m Collector Current, IC -- mA --900 [TR] Collector Current, IC -- mA --1000 --100 0 0 IB=0 Collector-to-Emitter Voltage, VCE -- mV hFE -- IC 1000 --25°C 3 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC --1000 --100 5°C =7 Ta 5°C --2 7 5 25 3 °C 2 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05098 --1.2 IT05095 [TR] --100 7 5 3 2 °C 75 5°C --2 °C 25 Ta= 2 5 7 --100 --10 7 5 3 2 2 3 5 7 --10 3 2 3 Collector Current, IC -- mA VBE(sat) -- IC --10 5 7--1000 IT05097 [TR] IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 --1.0 IC / IB=20 [TR] 3 --0.8 3 2 --1.0 --1.0 5 7--1000 IT05096 5 --0.6 VCE(sat) -- IC --1000 7 5 IC / IB=50 7 --0.4 Base-to-Emitter Voltage, VBE -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV DC Current Gain, hFE 25°C 2 --0.2 [TR] Ta=75°C 5 --10 --1.0 0 IT05094 VCE= --2V 7 100 --1.0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 5 3 2 25°C --1.0 Ta= --25°C 7 75°C 5 3 2 --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05099 No.7708-3/5 MCH6731 Cob -- VCB 3 [TR] 10 7 5 3 2 1.0 --1.0 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 7 3 2 100 7 5 3 2 10 --1.0 3 2 Collector Current, IC -- A ON-Resistance, Ron -- Ω IB 1.0 7 5 3 7 2 --1.0 3 5 7 Base Current, IB -- mA --10 IT06091 PC -- Ta Collector Dissipation, PC -- W 1.0 0.9 0.85 0.8 2 3 5 7--1000 IT05101 [TR] 10µs s 10 0 DC ms op er ati 7 5 on 3 2 --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 2 5 5 7 --100 1m IC= --1A 3 2 3 3 s µs 0µ 00 10 5 ms 10 OUT 2 2 2 ASO --1.0 0.1 --0.1 5 7 --10 ICP= --2A 1kΩ 3 3 Collector Current, IC -- mA 3 IN 5 2 [TR] 1kΩ f=1MHz 5 IT05100 Ron -- IB 10 [TR] VCE= --2V 7 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 2 fT -- IC 1000 f=1MHz --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V IT06884 IR -- VR [SBD] [TR] M ou nt 0.7 ed 0.6 on ac er 0.5 am ic bo ar 0.4 d (6 00 m 0.3 0.2 m2 ✕ 0. 8m m ) 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT06885 IF -- VF [SBD] 1.0 7 Reverse Current, IR -- µA 3 2 0.1 7 5 Ta= 125 °C 100 °C 75° C 50°C 25°C Forward Current, IF -- A 5 3 2 10000 7 5 3 2 Ta=125°C 100°C 1000 7 5 3 2 75°C 50°C 100 7 5 3 2 25°C 10 7 5 3 2 1.0 0.01 0 0.1 0.2 0.3 Forward Voltage, VF -- V 0.4 0.5 IT06886 0 5 10 Reverse Voltage, VR -- V 15 IT06887 No.7708-4/5 PF(AV) -- IO 0.9 Rectangular wave (1) [SBD] θ 360° 0.6 Sine wave 0.5 180° 360° 0.4 0.3 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0.1 0 0 0.2 0.4 0.6 [SBD] f=1MHz 0.8 0.7 C -- VR 7 (2) (4) (3) Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W MCH6731 0.8 1.0 Average Forward Current, IO -- A 1.2 1.4 IT06888 5 3 2 10 7 5 1.0 2 3 5 7 2 10 Reverse Voltage, VR -- V 3 IT06889 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7708-5/5