STD70NH02L STD70NH02L-1 N-channel 24V - 0.0062Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD70NH02L-1 24V <0.008Ω 60A(1) STD70NH02L 24V <0.008Ω 60A(1) 3 1. Value limited by wire bonding ■ RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device 3 2 1 DPAK 1 IPAK Description The device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STD70NH02LT4 D70NH02L DPAK Tape & reel STD70NH02L-1 D70NH02L IPAK Tube July 2006 Rev 5 1/16 www.st.com 16 Contents STD70NH02L - STD70NH02L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/16 ................................................ 9 STD70NH02L - STD70NH02L-1 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Value Unit Drain-source voltage rating 30 V Drain-source voltage (VGS = 0) 24 V Drain-gate voltage (RGS = 20kΩ) 24 V ± 20 V Drain current (continuous) at TC = 25°C 60 A Drain current (continuous) at TC = 100°C 50 A IDM (3) Drain current (pulsed) 240 A PTOT Total dissipation at TC = 25°C 70 W Derating factor 0.47 W/°C Single pulse avalanche energy 360 mJ Operating junction temperature Storage temperature -55 to 175 °C Vspike (1) VDS VDGR VGS ID (2) ID EAS (4) Tj Tstg Parameter Gate-source voltage 1. Guaranted when external Rg= 4.7Ω and Tf<Tfmax 2. Value limited by wire bonding 3. Pulse width limited by safe operating area 4. Starting Tj =25°C, Id = 30A, Vdd = 15V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W Maximum lead temperature for soldering purpose 275 °C TJ 3/16 Electrical characteristics 2 STD70NH02L - STD70NH02L-1 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 25mA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 20V VDS = 20V, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 30A VGS = 5V, ID = 15A Table 4. Symbol Test conditions Typ. Max. 24 1 Unit V 1 10 µA µA ±100 nA 1.8 V 0.0062 0.008 0.008 0.014 Ω Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 10V, ID = 18A 27 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 2050 545 70 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 10V, ID = 40A RG = 4.7Ω VGS = 4.5V (see Figure 13) 12 200 18 25 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 5V, ID = 60A, VGS = 10V, RG = 4.7Ω (see Figure 14) 17 7.7 3.5 Output charge VDS =10V, VGS =0V 14 nC Gate input resistance f=1MHz Gate DC Bias =0 Test Signal Level =20mV Open Drain 1 Ω Qoss(2) RG 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Qoss.= Coss * ∆ Vin, Coss = Cgd + Cgd. See Chapter 4: Appendix A 4/16 Min. 22 nC nC nC STD70NH02L - STD70NH02L-1 Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Electrical characteristics Test conditions Min. Typ. ISD = 30A, VGS = 0 Reverse recovery time ISD = 60A, di/dt = 100A/µs, Reverse recovery charge VDD = 15V, Tj = 150°C Reverse recovery current (see Figure 15) 36 35 3.6 Max. Unit 60 240 A A 1.3 V ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/16 Electrical characteristics STD70NH02L - STD70NH02L-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/16 STD70NH02L - STD70NH02L-1 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/16 Test circuit 3 STD70NH02L - STD70NH02L-1 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/16 Figure 18. Switching time waveform STD70NH02L - STD70NH02L-1 4 Appendix A Appendix A Figure 19. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature. ● The low side (SW2) device requires: ● Very low RDS(on) to reduce conduction losses ● Small Qgls to reduce the gate charge losses ● Small Coss to reduce losses due to output capacitance ● Small Qrr to reduce losses on SW1 during its turn-on ● The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source ● voltage to avoid the cross conduction phenomenon; ● The high side (SW1) device requires: ● Small Rg and Ls to allow higher gate current peak and to limit the voltage feedback on the gate ● Small Qg to have a faster commutation and to reduce gate charge losses ● Low RDS(on) to reduce the conduction losses. Table 6. Power losses calculation Pconduction Pswitching High side switching (SW1) Low side switch (SW2) R DS(on)SW1 * I 2L * δ R DS(on)SW2 * I 2L * (1 − δ ) Vin * (Q gsth(SW1) + Q gd(SW1) ) * f * IL Ig Zero Voltage Switching 9/16 Appendix A STD70NH02L - STD70NH02L-1 Table 6. Power losses calculation High side switching (SW1) Low side switch (SW2) (1) Not applicable Vin * Q rr(SW2) * f Conductio n Not applicable Vf(SW2) * I L * t deadtime * f Pgate(QG) Q g(SW1) * Vgg * f Q gls(SW2) * Vgg * f PQoss Vin * Q oss(SW1) * f Vin * Q oss(SW2) * f 2 2 Recovery Pdiode 1. Dissipated by SW1 during turn-on Table 7. Paramiters meaning Parameter d Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction Pswitching 10/16 Meaning On state losses On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate drive losses PQoss Output capacitance losses STD70NH02L - STD70NH02L-1 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STD70NH02L - STD70NH02L-1 DPAK MECHANICAL DATA mm. inch DIM. MAX. MIN. A A1 A2 B b4 MIN. 2.2 0.9 0.03 0.64 5.2 TYP 2.4 1.1 0.23 0.9 5.4 0.086 0.035 0.001 0.025 0.204 0.094 0.043 0.009 0.035 0.212 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 0.45 0.48 6 0.6 0.6 6.2 0.017 0.019 0.236 0.023 0.023 0.244 6.6 0.252 5.1 6.4 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.260 0.185 0.090 4.6 10.1 0.6 MAX. 0.200 4.7 2.28 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 12/16 STD70NH02L - STD70NH02L-1 Package mechanical data TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 C 0.45 C2 0.48 D 6 E 6.4 6.6 0.037 0.6 0.017 0.023 0.6 0.019 0.023 6.2 0.236 0.244 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 13/16 Packing mechanical data 6 STD70NH02L - STD70NH02L-1 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 14/16 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD70NH02L - STD70NH02L-1 7 Revision history Revision history Table 8. Revision history Date Revision Changes 09-Sep-2004 2 Preliminary version 10-Feb-2005 3 Complete version with curves 04-Feb-2006 4 Inserted new package: IPAK 19-Jul-2006 5 New template, no content change 15/16 STD70NH02L - STD70NH02L-1 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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