STMICROELECTRONICS STGD6NC60HT4

STGD6NC60H
N-channel 600V - 7A - DPAK
Very fast PowerMESH™ IGBT
General features
■
■
■
Type
VCES
VCE(sat)Max
@25°C
IC
@100°C
STGD6NC60H
600V
<2.5V
7A
Low on voltage drop (Vcesat)
3
1
Low CRES / CIES ratio (no cross-conduction
susceptibility)
DPAK
High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) manta in ing a low voltage drop.
Internal schematic diagram
Applications
■
High frequency inverters
■
SMPS and PFC in both hard switch and
resonant topologies
■
Motor drivers
Order code
Part number
Marking
Package
Packaging
STGD6NC60HT4
GD6NC60H
DPAK
Tape & reel
February 2007
Rev 3
1/14
www.st.com
14
Contents
STGD6NC60H
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 9
STGD6NC60H
1
Electrical ratings
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at TC = 25°C
15
A
IC(1)
Collector current (continuous) at TC = 100°C
7
A
Collector current (pulsed)
21
A
VGE
Gate-emitter voltage
±20
V
PTOT
Total dissipation at TC = 25°C
56
W
Tstg
Storage temperature
– 55 to 150
°C
300
°C
Value
Unit
2
°C/W
62.5
°C/W
ICM(2)
Tj
Operating junction temperature
Tl
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
1. Calculated according to the iterative formula::
T
–T
JMAX
C
I ( T ) = -----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Pulse width limited by max junction temperature
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
3/14
Electrical characteristics
2
STGD6NC60H
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
VBR(CES)
Collector-emitter
breakdown voltage
VCE(sat)
Collector-emitter saturation VGE= 15V, IC= 3A
voltage
VGE= 15V, IC= 3A, Tc= 125°C
VGE(th)
Gate threshold voltage
VCE= VGE, IC= 250 µA
ICES
Collector cut-off current
(VGE = 0)
VCE= Max rating,TC= 25°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V, VCE= 0
Forward transconductance
VCE = 15V, IC= 3A
gfs
Table 4.
Symbol
Cies
Coes
Cres
Qg
Test conditions
IC= 1mA, VGE= 0
Min.
Typ.
Max.
600
Unit
V
1.9
1.7
3.75
VCE=Max rating,TC= 125°C
2.5
V
V
5.75
V
10
1
µA
mA
±100
nA
3
S
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 3A,
Qgc
Total gate charge
Gate-emitter charge
Gate-collector charge
ICL
Turn-off SOA minimum
current
Vclamp=390V, Tj=150°C,
RG=10Ω, VGE=15V
Qge
4/14
Static
VGE = 15V,
(see Figure 16)
Min.
Typ. Max.
Unit
205
32
5.5
pF
pF
pF
13.6
3.4
5.1
nC
nC
nC
19
A
STGD6NC60H
Electrical characteristics
Table 5.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 6.
Symbol
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
Min.
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 25°C
(see Figure 17)
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 17)
VCC = 390V, IC = 3A,
RGE = 10Ω, VGE =
15V,TJ=25°C
(see Figure 17)
VCC = 390V, IC = 3A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 17)
Typ.
Max.
Unit
12
5
612
ns
ns
A/µs
13
4.3
560
ns
ns
A/µs
40
76
100
ns
ns
ns
60
98
124
ns
ns
ns
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
VCC = 390V, IC = 3A
RG= 10Ω, VGE=15V,
Tj=25°C
(see Figure 17)
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 125°C
(see Figure 17)
Min.
Typ.
Max.
Unit
20
68
88
µJ
µJ
µJ
37
93
130
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 17. If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/14
Electrical characteristics
STGD6NC60H
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on voltage vs
temperature
Figure 5.
Gate charge vs gate-source voltage Figure 6.
6/14
Capacitance variations
STGD6NC60H
Electrical characteristics
Figure 7.
Normalized gate threshold voltage
vs temperature
Figure 8.
Collector-emitter on voltage vs
collector current
Figure 9.
Normalized breakdown voltage vs
temperature
Figure 10. Switching losses vs temperature
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/14
Electrical characteristics
Figure 13. Thermal impedance
8/14
STGD6NC60H
Figure 14. Turn-off SOA
STGD6NC60H
3
Test circuit
Test circuit
Figure 15. Test circuit for inductive load
switching
Figure 16. Gate charge test circuit
Figure 17. Switching waveform
Figure 18. Diode recovery time waveform
9/14
Package mechanical data
4
STGD6NC60H
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
STGD6NC60H
Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
0.260
E
6.40
6.60
0.252
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
1.00
0.024
L2
L4
V2
0.8
0.60
0
o
0.031
8
o
0
o
0.039
0o
P032P_B
11/14
Packaging mechanical data
5
STGD6NC60H
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
12/14
inch
1.5
D1
1.5
E
1.65
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STGD6NC60H
6
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
14-Jun-2005
1
First Release
07-Mar-2006
2
Complete version
08-Feb-2007
3
The document has been reformatted
13/14
STGD6NC60H
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