STMICROELECTRONICS STSJ60NH3LL

STSJ60NH3LL
N-channel 30V - 0.004Ω - 15A - PowerSO-8™
STripFET™ Power MOSFET for DC-DC conversion
General features
Type
VDSS
RDS(on)
ID
STSJ60NH3LL
30V
<0.0057Ω
15A (2)
■
Optimal RDS(on) x Qg trade-off @ 4.5 V
■
Conduction losses reduced
■
Improved junction-case thermal resistance
■
Low threshold device
PowerSO-8™
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
The exposed slug reduces the Rthj-c improving
the current capability.
Internal schematic diagram
Applications
■
Switching application
DRAIN CONTACT ALSO ON THE BACKSIDE
Order codes
Part number
Marking
Package
Packaging
STSJ60NH3LL
60H3LL-
PowerSO-8™
Tape & reel
April 2006
Rev 1
1/12
www.st.com
12
Contents
STSJ60NH3LL
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STSJ60NH3LL
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
30
V
± 16
V
Drain current (continuous) at TC = 25°C
60
A
ID
Drain current (continuous) at TC = 100°C
37.5
A
ID(2)
Drain current (continuous) at TC = 25°C
15
A
ID
Drain current (continuous) at TC = 100°C
9.4
A
Drain current (pulsed)
60
A
Ptot (1)
Total dissipation at T C = 25°C
50
W
(2)
Total dissipation at T C = 25°C
3
W
-55 to 150
°C
Value
Unit
VDS
Drain-source voltage (VGS = 0)
VGS
Gate- source voltage
ID
(1)
IDM
Ptot
(3)
Tstg
Tj
Storage temperature
Operating junction temperature
1. This value is rated according to Rthj-c
2. This value is rated according to Rthj-pcb
3. Pulse width limited by safe operating area
Table 2.
Symbol
Thermal resistance
Parameter
Rthj-case
Thermal resistance junction-case (drain) Max
2.5
°C/W
Rthj-amb
Thermal resistance junction-ambient Max
42
°C/W
3/12
Electrical characteristics
2
STSJ60NH3LL
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Symbol
Parameter
Test condictions
Drain-source
breakdown voltage
ID = 250 µA, VGS = 0
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125°C
Gate-body leakage
current (VDS = 0)
VGS = ± 16V
VGS(th)
Gate threshold voltage
VDS = V GS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 7.5A
VGS = 4.5V, ID = 7.5A
V(BR)DSS
IDSS
IGSS
Table 4.
Symbol
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
1
V
0.004
0.005
0.0057
0.0075
Typ.
Max.
Ω
Ω
Dynamic
Parameter
Test condictions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=25V, f=1MHz, VGS = 0
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15V, ID=15A
VGS=4.5V
(see Figure 13)
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
RG
4/12
On/off states
Min.
1810
565
41
0.5
Unit
pF
pF
pF
18
4.8
5.3
24
nC
nC
nC
1.5
3
Ω
STSJ60NH3LL
Electrical characteristics
Table 5.
Symbol
Switching times
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise Time
VDD = 15V, ID = 7.5A
RG = 4.7Ω , VGS = 10V
(see Figure 12)
8
65
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 15V, ID = 7.5A
RG = 4.7Ω , VGS = 10V
(see Figure 12)
38
20
ns
ns
Table 6.
Symbol
ISD
ISDM
VSD (1)
trr
Qrr
IRRM
Source drain diode
Parameter
Test condictions
Min
Typ.
Source-drain current
Source-drain current (pulsed)
Forward On Voltage
ISD = 15A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15A, di/dt = 100A/µs
VDD = 15V, T j = 25°C
(see Figure 17)
22
32
1.9
Max
Unit
15
60
A
A
1.3
V
ns
nC
A
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STSJ60NH3LL
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
6/12
STSJ60NH3LL
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
3
STSJ60NH3LL
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
Figure 15. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 16. Unclamped inductive waveform
8/12
Figure 17. Switching time waveform
STSJ60NH3LL
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STSJ60NH3LL
PowerSO-8™ MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
TYP.
1.75
0.1
MAX.
0.068
0.25
a2
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
0.196
c1
45° (typ.)
D
4.8
5.0
0.188
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
e4
2.79
0.110
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
10/12
MIN.
0.6
0.023
8° (max.)
STSJ60NH3LL
5
Revision history
Revision history
Table 7.
Revision history
Date
Revision
12-Apr-2006
1
Changes
First release
11/12
STSJ60NH3LL
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