STW55NM60ND N-channel 600 V - 0.047 Ω - 51 A TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type VDSS STW55NM60ND 600 V RDS(on) ID Pw < 0.060 Ω 51 A 350 W ■ The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High dv/dt and avalanche capabilities 2 3 1 TO-247 Application ■ Switching applications Figure 1. Internal schematic diagram Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STW55NM60ND 55NM60ND TO-247 Tube November 2007 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 www.st.com 9 Electrical ratings 1 STW55NM60ND Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 51 A ID Drain current (continuous) at TC = 100 °C 32 A Drain current (pulsed) 204 A Total dissipation at TC = 25 °C 350 W Derating factor 2.8 W/°C Peak diode recovery voltage slope 40 V/ns –55 to 150 150 °C Value Unit 0.36 °C/W 50 °C/W 300 °C Max value Unit IDM (1) PTOT dv/dt(2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 51 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Table 4. Symbol 2/9 Maximum lead temperature for soldering purpose Avalanche characteristics Parameter IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) 850 mJ STW55NM60ND 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 25.5 A 0.047 0.060 Ω Typ. Max. Unit V(BR)DSS Table 6. Symbol 600 3 V Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15 V, ID = 25.5 A 45 Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 5800 300 30 Coss eq.(2) Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 900 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 25.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 7), (see Figure 2) TBD TBD TBD TBD ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 51 A, VGS = 10 V, (see Figure 3) 190 30 90 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain 2.5 Ω S pF pF pF 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/9 Electrical characteristics Table 7. Symbol STW55NM60ND Source drain diode Parameter Test conditions Typ. Max. Unit 51 204 A A 1.3 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 50 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, VDD = 100 V di/dt = 100 A/µs (see Figure 4) TBD TBD TBD ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A,VDD = 100 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 4) TBD TBD TBD ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/9 Min. STW55NM60ND Test circuit 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform Figure 3. Figure 7. Gate charge test circuit 5/9 Package mechanical data 4 STW55NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/9 STW55NM60ND Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 7/9 Revision history 5 STW55NM60ND Revision history Table 8. 8/9 Document revision history Date Revision 16-Nov-2007 1 Changes First release. STW55NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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