UNISONIC TECHNOLOGIES CO., LTD UT3401 Power MOSFET P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT3401 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 2 1 SOT-23 SYMBOL 2.Drain *Pb-free plating product number: UT3401L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT3401-AE3-R UT3401L-AE3-R UT3401L-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 34A Lead Plating www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-109,A UT3401 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage SYMBOL VDSS Gate-Source Voltage VGSS RATINGS -30 UNITS V ±12 V Ta =25°C -4.2 A Continuous Drain Current (Note 1) ID Ta =70°C -3.5 A Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation (Note 1) PD 1.4 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction-to-Ambient MIN TYP 65 MAX 90 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS MIN TYP BVDSS IDSS IGSS ID=-250µA, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A -0.7 RDS(ON) -1 42 53 80 11 MAX UNIT -1 ±100 V µA nA -1.3 50 65 120 V mΩ mΩ mΩ S Forward Transconductance gFS 7 DYNAMIC PARAMETERS Input Capacitance CISS 954 pF Output Capacitance COSS VGS =0V, VDS =-15V, f=1MHz 115 pF 77 pF Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 6.3 ns VGS=-10V, VDS=-15V Turn-ON Rise Time tR 3.2 ns Turn-OFF Delay Time tD(OFF) RL=3.6Ω, RG =6Ω 38.2 ns Turn-OFF Fall-Time tF 12 ns Total Gate Charge QG 9.4 nC VGS=-4.5V, VDS=-15V, ID=-4A Gate-Source Charge QGS 2 nC 3 nC Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VDS=0V, IS=-1A -0.75 -1 V Maximum Continuous Drain-Source Diode IS -2.2 A Forward Current Reverse Recovery Time tRR 20.2 ns IF=-4A, dI/dt=100A/µs 11.2 nC Reverse Recovery Charge QRR Note: 1. The value of θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user ' s specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 2. Repetitive Rating: Pulse width limited by TJ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-109,A UT3401 Power MOSFET TYPICAL CHARACTERISTICS On-Region Characteristics(Note3) Transfer Characteristics (Note3) 10 -10V Continuous Drain Current, I D (A) Continuous Drain Current, I D (A) 25.00 -4.5V 20.00 -3V 15.00 -2.5V 10.00 5.00 VGS =-2V 0.00 0.00 VDS=-5V 8 6 125℃ 4 25℃ 2 0 1.00 2.00 3.00 4.00 0 5.00 Drain-Source Voltage, VDSS (V) Normalized On-Resistance On-Resistance, RDS(ON) (mΩ) VGS = -4.5V 40 VGS = 10V 20 0.00 I D=- 3.5 A, VGS=- 10V 1.4 VGS=-2.5V ID =-1A 1.2 1 0.8 2.00 4.00 6.00 8.00 0 10.00 25 50 100 75 125 150 175 Temperature (°C) On-Resistance vs. Gate-Source Voltage (Note3) Body-Diode Characteristics(Note3) 1.0E+01 Maximum Continuous Drain-Source Diode Forward Current, -I S (A) On-Resistance, RDS(ON) (mΩ) 3 1.6 Drain Current , I D (A) 190 2.5 1.8 VGS = -2.5V 60 2 On-Resistance vs. Junction Temperature (Note3) 100 80 1.5 1 Gate-Source Voltage, VGSS (V) On-Resistance vs. Drain Current and Gate Voltage(Note3) 120 0.5 170 150 ID=-2A 130 110 90 125℃ 70 50 25℃ 30 10 0 3 4 6 8 10 Gate-Source Voltage, -VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1.0E+00 1.0E-01 125℃ 1.0E-02 1.0E-03 25℃ 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Voltage, -VSD (V) 3 of 5 QW-R502-109,A UT3401 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics Gate-Source Voltage, -VGS (V) 5 Capacitance Characteristics 1400 VDS=-15V I D=-4A 1200 Capacitance (pF) 4 3 2 1000 C ISS 800 600 400 C OSS 1 0 0 0 2 10 4 6 8 Total Gate Charge, Qg (nC) 12 0 Maximum Forward Biased Safe Operating Area (Note 4) 40 TJ(Max )=150°C TA=25°C 5 10 15 20 25 Drain-Source Voltage, -VDS (V) TJ(MAX)=150°C TA=25°C 30 100µs RDS(ON) 10.0 limited 1ms 0.1s 1.0 30 Single Pulse Power Rating Junction-to-Ambient (Note 4) 10µs Power (W) 100.0 Continuous Drain Current, -ID (A) C RSS 200 10ms 1s 20 10 10s DC 0.1 0.1 1 10 100 Drain-Source Voltage, -VDS (V) Normalized Transient Thermal Resistance, ZθJA 10 0.01 0.1 1 10 100 1000 Pulse Width (s) Normalized Maximum Transient Thermal Impedance D=T on /T T J,PK=T A+PDM .Z θJA .R θJA R θJA=90°C/W 0 0.001 Note: 3. The static characteristics obtained using80µs pulses, duty cycle 0.5% max. 4. The measurements are performed with the 2 device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. In descending order D=0.5, 0. 3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on T Single Pulse 0.01 0.00001 0.0001 0. 001 0.01 0.1 1 10 100 1000 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-109,A UT3401 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-109,A