MITSUBISHI MGFC47B3538B

<C band Internally Matched Power GaAs FET>
MGFC47B3538B
3.5 – 3.8GHz BAND / 50W
DESCRIPTION
The MGFC47B3538B is an internally impedance-matched GaAs
power FET especially designed for use in 3.5 – 3.8 GHz band
amplifiers. The hermetically sealed metal-ceramic package
guarantees high reliability.
OUTLINE DRAWING
FEATURES
Crass AB operation
Internally matched to 50(ohm)
 High output power: Po(SAT) = 50 W (typ.)
 High power gain: GP = 10 dB (TPE.) @Po = 37dBm
 Distortion: EVM = 2.0% (TPE.) @ Po = 37dBm
Recommended Bias Condition
 Vd = 12(V)
 ID = 1.5 (A)
 Rg = 10 ohm
GF-60
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
MAXID
PT *1
Tch
Tstg
Parameter
Gate to drain voltage
Gate to source voltage
Maximum drain current
Total power dissipation
Channel temperature
Storage temperature
(Ta=25deg.C)
Ratings
-15
-10
12
115
175
-55 / +150
Unit
V
V
A
W
deg.C
deg.C
*1 : Tc=25deg.C
ELECTRICAL CARACTERISTICS
Symbol
VGS(off)
Po(SAT)
GP
ID
EVM *2
Rth(ch-c) *3
(Ta=25deg.C)
Parameter
Gate to source cut-off voltage
Output power
Power gain
Drain current
Error Vector Magnitude
Thermal resistance
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable, but there is always the possibility
that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such as
(I) placement of substitutive , auxiliary circuits , (ii)
use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Test conditions
VDS = 3V , ID = 100mA
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
VDS=12V, ID(RF off)=1.5A, f=3.5-3.8GHz
Pout=37dBm
delta Vf method
*2 :WiMAX Downlink , 64QA M-3/4, Channel Bandwidth: 7MHz
*3 : Channel-case
Publication Date : May, 2012
1
Min.
-0.5
9.0
-
Limits
Typ.
47
10.5
2.0
1.5
0.65
Unit
Max.
-3.0
3
2.5
1.2
V
dBm
dB
A
%
d eg.C/W
<C band internally matched power GaAs FET>
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
EVM(@WiMAX) vs . Pout characteristics of MGFC47B3538B-01
f=3.6GHz
f=3.8GHz
65
12
60
12
60
12
60
12
60
11
55
11
55
11
55
11
55
10
50
10
50
10
50
10
50
9
45
9
45
9
45
9
45
40
8
40
8
40
8
40
7
35
Gp
ED
6
30
5
25
4
EVM
7
35
Gp
ED
6
30
7
35
EVM
Gp
6
30
ED
ED(%)
EVM
Gp(dB) EVM(%)
13
ED(%)
65
Gp(dB) EVM(%)
13
Gp(dB) EVM(%)
65
ED(%)
13
8
Gp(dB) EVM(%)
f=3.7GHz
65
7
35
EVM
Gp
6
30
ED
5
25
5
25
5
25
20
4
20
4
20
4
20
3
15
3
15
3
15
3
15
2
10
2
10
2
10
2
10
1
5
1
5
1
5
1
5
0
0
0
0
30
0
0
30
0
30
32
34
36
38
40
30
Pout(d Bm)
○EVM(@WiMax)
32
34
36
38
40
Pout(dBm)
vs. FREQ
34
36
38
40
characteristics of MGFC47B3538B-01
○GP(@WiMax)
vs. FREQ
[email protected]=40.0dBm
2.5
36
38
40
[email protected]=37.0dBm
11.5
11
[email protected]=39.0dBm
GP(dB)
2
[email protected]=38.0dBm
1.5
34
characteristics of MGFC47B3538B-01
12
3
0
32
Pout(dBm)
Pout(dBm)
3.5
EVM(%)
32
1
10.5
10
9.5
[email protected]=37.0dBm
0.5
9
0
8.5
3.4
3.5
3.6
3.7
3.8
3.9
3.4
FREQ(GHz)
3.5
3.6
3.7
FREQ(GHz)
Publication Date : May, 2012
2
3.8
3.9
ED(%)
f=3.5GHz
13
<C band internally matched power GaAs FET>
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
MGFC47B3538B RF TEST FIXTURE
C1,C2,C7,C8=GR708 8pF
C3,C5=1000pF
C4=100nF
C6=470nF
R1= 10ohm
R2=CR10 51ohm
Board material:Teflon t=0.8mm
Specific dielectric constant=2.6
UNIT:(mm)
Publication Date : May, 2012
3
<C band internally matched power GaAs FET>
MGFC42V7177
7.1 - 7.7GHz BAND / 16W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : May, 2012
4