MITSUBISHI MGFS45V2123A

< L/S band internally matched power GaAs FET >
MGFS45V2123A
2.1 – 2.3 GHz BAND / 32W
OUTLINE DRAWING
DESCRIPTION
The MGFS45V2123A is an internally impedance-matched
GaAs power FET especially designed for use in 2.1 – 2.3
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
2.0MIN.
(0.079MIN.)
24.0± 0.3(0.945±0.012)
APPLICATION
2
3
QUALITY
 IG
1.4
(0.055)
RECOMMENDED BIAS CONDITIONS
 VDS=10V  ID=6.5A  RG=25ohm
Absolute maximum ratings
GATE
2
SOURCE(FLANGE)
3
DRAIN
(Ta=25C)
Ratings
Unit
Gate to drain breakdown voltage
-15
V
VGSO
Gate to source breakdown voltage
-15
V
ID
Drain current
22
A
IGR
Reverse gate current
-61
mA
IGF
Forward gate current
76
mA
PT *1
Total power dissipation
100
W
Tch
Cannel temperature
175
C
Tstg
Storage temperature
-65 to +175
C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
*1 : Tc=25C
Symbol
1
GF-51
Parameter
Electrical characteristics
0.1±0.05
3.65±0.4
(0.144±0.016)
15.8(0.622)
2.4±0.2
(0.094±0.008)
20.4± 0.2(0.803± 0.008)
 item 01 : 2.1 – 2.3 GHz band power amplifier
 item 51 : 2.1 – 2.3 GHz band digital radio communication
VGDO
0.6± 0.15
(0.024± 0.006)
2.0MIN.
(0.079MIN.)
17.4±0.2
(0.685±0.008)
Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=32W (TYP.) @f=2.1 – 2.3GHz
 High power gain
GLP=12.0dB (TYP.) @f=2.1 – 2.3GHz
 High power added efficiency
P.A.E.=45% (TYP.) @f=2.1 – 2.3GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
1
8.0±0.2
(0.315±0.008)
FEATURES
Symbol
Unit : millimeters (inches)
(Ta=25C)
Parameter
Test conditions
Limits
Min.
Unit
Typ.
Max.
VGS(off)
P1dB
Gate to source cut-off voltage
VDS=3V,ID=60mA
-
-
-5
V
Output power at 1dB gain compression
VDS=10V,ID(RF off)=6.5A
44
45
-
dBm
GLP
Linear Power Gain
f=2.1 – 2.3GHz
11
12
-
dB
ID
Drain current
-
7.5
-
A
P.A.E.
Power added efficiency
-
45
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
-
-
1.5
C/W
delta Vf method
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.1,2.2,2.3GHz,delta f=5MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45V2123A
2.1 – 2.3 GHz BAND / 32W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
2