STMICROELECTRONICS STP15N65M5

STF15N65M5, STFI15N65M5,
STP15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET
in TO-220FP, I2PAKFP and TO-220 packages
Datasheet — production data
Features
Order codes
VDS @
TJmax
RDS(on)
max
ID
3
STF15N65M5
STFI15N65M5
1
710 V
< 0.34 Ω
2
TO-220FP
11 A
TAB
STP15N65M5
■
Worldwide best RDS(on) * area
■
Higher VDSS rating and high dv/dt capability
■
Excellent switching performance
■
100% avalanche tested
1
I
3
2
Figure 1.
2
TO-220
Internal schematic diagram
Applications
■
1
3
2PAKFP
$4!"
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
STF15N65M5
STFI15N65M5
Package
TO-220FP
15N65M5
I2PAKFP
STP15N65M5
November 2012
This is information on a product in full production.
Packaging
Tube
TO-220
Doc ID 022863 Rev 2
1/17
www.st.com
17
Contents
STF15N65M5, STFI15N65M5, STP15N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP
TO-220
VGS
ID
PTOT
dv/dt
(2)
A
6.9
(1)
6.9
A
Drain current (pulsed)
44
44(1)
A
Total dissipation at TC = 25 °C
85
25
W
11
11
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
V
(1)
Drain current (continuous) at TC = 100 °C
(1)
I2PAKFP
± 25
Drain current (continuous) at TC = 25 °C
ID
IDM
Gate-source voltage
Unit
15
V/ns
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220FP
TO-220
I2PAKFP
Rthj-case Thermal resistance junction-case max
Rthj-amb
Table 4.
Symbol
Thermal resistance junction-ambient max
5
1.47
°C/W
62.5
°C/W
Value
Unit
Avalanche characteristics
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
2.5
A
EAS
Single pulse avalanche energy (starting tj=
25°C, ID= IAR; VDD=50 V)
160
mJ
Doc ID 022863 Rev 2
3/17
Electrical characteristics
2
STF15N65M5, STFI15N65M5, STP15N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 5.5 A
resistance
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Typ.
Max.
Unit
650
V
1
100
µA
µA
± 100
nA
4
5
V
0.308
0.34
Ω
Min.
Typ.
Max.
Unit
-
816
23
2.6
-
pF
pF
pF
-
70
-
pF
-
21
-
pF
-
5
-
Ω
-
22
5.5
11
-
nC
nC
nC
VGS = ± 25 V
VGS(th)
Table 6.
Min.
3
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
VDS = 0 to 520 V, VGS = 0
Equivalent
capacitance energy
related
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 5.5 A,
VGS = 10 V
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Table 7.
Symbol
td(V)
tr (V)
tf (i)
tc(off)
Table 8.
Switching times
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
30
8
11
12.5
Min.
Typ.
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
11
44
A
A
ISD = 11 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 22)
-
247
2.4
19.5
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 22)
-
312
3
19
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022863 Rev 2
5/17
Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and I2PAKFP
Figure 3.
Thermal impedance for TO-220FP
and I2PAKFP
Figure 5.
Thermal impedance for TO-220
Figure 7.
Transfer characteristics
AM15286v1
n)
D
S(
o
10
O
p
Li era
m
ite tion
d
by in t
m his
ax a
R rea
is
ID
(A)
1
10µs
100µs
1ms
Tj=150°C
Tc=25°C
0.1
10ms
Single
pulse
0.01
0.1
10
1
Figure 4.
100
VDS(V)
Safe operating area for TO-220
AM15285v1
ID
(A)
is
ea )
ar S(on
D
th R
in ax
n
it o y m
b
ra
pe ed
O imit
L
10
10µs
100µs
is
1
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Output characteristics
AM15287v1
ID
(A)
AM152887v1
ID
(A)
VDS= 25 V
VGS= 9, 10 V
20
20
VGS= 8 V
15
15
VGS= 7 V
10
10
5
5
VGS= 6 V
0
0
6/17
5
10
15
20
25 VDS(V)
0
3
Doc ID 022863 Rev 2
4
5
6
7
8
9 VGS(V)
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
AM15289v1
VGS
(V)
VDS
(V)
500
VDD=520V
12
ID=5.5A
VDS
10
Static drain-source on-resistance
AM15293v1
RDS(on)
(Ω)
0.35
400
0.33
300
0.31
200
0.29
100
0.27
VGS=10V
8
6
4
2
0
0
10
5
15
0
25 Qg(nC)
20
Figure 10. Capacitance variations
4
2
6
8
10 ID(A)
Figure 11. Output capacitance stored energy
AM15290v1
C
(pF)
0.25
0
AM15291v1
Eoss
(µJ)
4
3.5
1000
Ciss
3
2.5
100
2
Coss
1.5
10
1
Crss
0.5
1
0.1
1
10
100
Figure 12. Normalized gate threshold voltage
vs temperature
AM05459v2
VGS(th)
(norm)
1.10
0
0
VDS(V)
ID = 250 µA
VDS = VGS
100
200 300
400 500 600
VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
AM05460v2
VGS= 10 V
ID= 5.5 A
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 022863 Rev 2
0
25
50
75 100
TJ(°C)
7/17
Electrical characteristics
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
AM05461v1
VSD
(V)
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
20
30
50 ISD(A)
40
0.92
-50 -25
Figure 16. Switching losses vs gate resistance
(1)
AM15292v1
E (μJ)
120
Eon
VDD=400V
VGS=10V
ID=7A
100
80
60
Eoff
40
20
0
0
10
20
30
40
50 RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/17
Doc ID 022863 Rev 2
0
25
50
75 100
TJ(°C)
STF15N65M5, STFI15N65M5, STP15N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
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07
K
K
07
!-V
!-V
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
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!
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6$
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!-V
Figure 21. Unclamped inductive waveform
!-V
Figure 22. Switching time waveform
Inductive Load Turn - off
6"2$33
Id
6$
90%Vds
90%Id
td(v)
)$Vgs
90%Vgs
on
)$
))
Vgs(I(t))
6$$
6$$
10%Id
10%Vds
Vds
tr(v)
!-V
Doc ID 022863 Rev 2
tf(i)
tc(off)
AM05540v1
9/17
Package mechanical data
4
STF15N65M5, STFI15N65M5, STP15N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 022863 Rev 2
11/17
Package mechanical data
STF15N65M5, STFI15N65M5, STP15N65M5
Figure 23. TO-220FP drawing
7012510_Rev_K_B
12/17
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Table 10.
Package mechanical data
I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 24. I2PAKFP (TO-281) drawing
REV!
Doc ID 022863 Rev 2
13/17
Package mechanical data
Table 11.
STF15N65M5, STFI15N65M5, STP15N65M5
TO-220 type A mechanical data
mm
Dim.
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/17
Typ.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 022863 Rev 2
15/17
Revision history
5
STF15N65M5, STFI15N65M5, STP15N65M5
Revision history
Table 12.
Document revision history
Date
Revision
05-Mar-2012
1
First release.
2
– The part number STB15N65M5 has been moved to a separate
datasheet.
– Added Section 2.1: Electrical characteristics (curves).
– Minor text changes.
09-Nov-2012
16/17
Changes
Doc ID 022863 Rev 2
STF15N65M5, STFI15N65M5, STP15N65M5
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Doc ID 022863 Rev 2
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