KODENSHI DN500P

DN500P
Semiconductor
NPN Silicon Transistor
Description
• Extremely low collector-to-emitter saturation voltage
( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP500P
• Switching Application
Ordering Information
Type NO.
Marking
DN500P
N5□
:
Package Code
SOT-223
monthly code
Outline Dimensions
unit : mm
PIN Connections
1. Base
2. Collector
3. Emitter
KST-7002-002
1
DN500P
Absolute maximum ratings
(Ta=25° C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VC B O
15
V
Collector-Emitter voltage
VC E O
12
V
Emitter-Base voltage
VE B O
5
V
Collector current
IC
1
A
Collector dissipation
PC
1.1
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55~150
°C
Electrical Characteristics
(Ta=25° C)
Characteristic
Symbol
Collector-Base breakdown voltage
BVCBO
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Min.
Typ.
Max.
Unit
IC =50µA, IE=0
15
-
-
V
BVCEO
IC =1mA, IB=0
12
-
-
V
BVEBO
IE=50µA, IC =0
5
-
-
V
Collector cut-off current
ICBO
VCB=15V, IE=0
-
-
0.1
µA
Emitter cut-off current
IEBO
VEB=4V, IC =0
-
-
0.1
µA
h FE1
VCE=2V, IC =500mA
160
-
320
-
h FE2
VCE=2V, IC =3A
40
-
-
-
DC current gain
Test Condition
Collector-Emitter on voltage
VCE(sat1)
IC =3A, IB=150mA
-
-
0.3
V
Base-Emitter on voltage
VBE(sat)
IC =3A, IB=150mA
-
-
1.2
V
fT
VCB=5V, IC =500mA
-
150
-
MHz
VCB=10V, IE=0, f=1MHz
-
-
50
pF
Transition frequency
Collector output capacitance
C ob
KST-7002-002
2
DN500P
Electrical Characteristic Curves
Fig. 2 Ic - VB E
Fig. 1 Pc - Ta
Fig. 4 VCE(sat) - IC
Fig. 3 hFE - IC
KST-7002-002
3