APT30GT60BRD
600V
55A
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
TO-247
G
• Low Forward Voltage Drop
• High Freq. Switching to 150KHz
• Low Tail Current
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
• Ultrafast Soft Recovery Antiparallel Diode
MAXIMUM RATINGS (IGBT)
Parameter
UNIT
Collector-Gate Voltage (RGE = 20KΩ)
VGE
Gate-Emitter Voltage
I C1
Continuous Collector Current @ TC = 25°C
I C2
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current
I CM2
Pulsed Collector Current
1
PD
Total Power Dissipation
@ TC = 25°C
@ TC = 110°C
600
600
Volts
±20
55
30
Amps
110
60
IM
I CM1
1
A
VCGR
RY
APT30GT60BRD
Collector-Emitter Voltage
200
Watts
-55 to 150
EL
Operating and Storage Junction Temperature Range
°C
300
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
PR
TL
E
All Ratings: TC = 25°C unless otherwise specified.
VCES
TJ,TSTG
C
E
G
IN
Symbol
C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Characteristic / Test Conditions
MIN
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
600
Gate Threshold Voltage
(VCE = VGE, I C = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25°C)
TYP
MAX
3
4
5
1.6
2.0
2.5
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 150°C)
2.8
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
250
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 150°C)
2000
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
±100
UNIT
Volts
µA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
052-6251 Rev B
Symbol
DYNAMIC CHARACTERISTICS (IGBT)
Symbol
Characteristic
Test Conditions
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
2
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller") Charge
tr
td(off)
tf
Eon
RY
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
PR
3
Rise Time
18
30
VGE = 15V
25
I C = I C2
R G = 10Ω
.5
TJ = +150°C
1.2
3
Ets
Total Switching Losses
gfe
Forward Transconductance
mJ
1.7
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
18
30
R G = 10Ω
20
TJ = +25°C
1.3
VCE = 20V, I C = I C2
ns
260
I C = I C2
Fall Time
ns
300
VGE = 15V
Turn-off Delay Time
ns
140
3
Turn-on Delay Time
nC
200
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
Rise Time
Total Switching Losses
tf
55
A
Turn-on Delay Time
Ets
td(off)
VGE = 15V
RG = 10Ω
Turn-off Switching Energy
tr
14
I C = I C2
Fall Time
UNIT
pF
60
Resistive Switching (25°C)
Turn-off Delay Time
Eoff
td(on)
140
IN
td(on)
Gate Charge
VGE = 15V
12
IM
tf
90
VCC = 0.8VCES
EL
td(off)
f = 1 MHz
I C = I C2
Rise Time
MAX
250
VCC = 0.5VCES
Turn-on Delay Time
TYP
1600
VCE = 25V
Qg
tr
MIN
Capacitance
VGE = 0V
Cies
td(on)
APT30GT60BRD
mJ
6
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
RΘJC
RΘJA
WT
052-6251 Rev B
Torque
Characteristic
MIN
TYP
MAX
Junction to Case (IGBT)
0.63
Junction to Case (FRED)
0.90
°C/W
40
Junction to Ambient
Package Weight
UNIT
0.22
oz
6.1
gm
10
lb•in
1.1
N•m
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT30GT60BRD
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS (FRED)
Symbol
VR
Characteristic / Test Conditions
APT30GT60BRD
UNIT
600
Volts
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
30
RMS Forward Current
70
IFSM
Symbol
Characteristic / Test Conditions
IN
STATIC ELECTRICAL CHARACTERISTICS (FRED)
MIN
TYP
UNIT
IM
Volts
IF = 30A, TJ = 150°C
1.6
Maximum Reverse Leakage Current
VR = VR Rated
250
Maximum Reverse Leakage Current
VR = VR Rated, TJ = 125°C
500
EL
LS
1.5
IF = 60A
10
Series Inductance (Lead to Lead 5mm from Base)
PR
IRM
Maximum Forward Voltage
MAX
1.8
IF = 30A
VF
Amps
320
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
A
IF(RMS)
RY
VRRM
µA
nH
DYNAMIC CHARACTERISTICS (FRED)
Characteristic
MIN
TYP
MAX
65
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
50
trr2
Reverse Recovery Time
TJ = 25°C
50
trr3
IF = 30A, diF /dt = -240A/µs, VR = 350V
TJ = 100°C
80
tfr1
Forward Recovery Time
TJ = 25°C
155
tfr2
IF = 30A, diF /dt = 240A/µs, VR = 350V
TJ = 100°C
155
IRRM1
Reverse Recovery Current
TJ = 25°C
4
10
IRRM2
IF = 30A, diF /dt = -240A/µs, VR = 350V
TJ = 100°C
7.5
15
Qrr1
Recovery Charge
TJ = 25°C
100
Qrr2
IF = 30A, diF /dt = -240A/µs, VR = 350V
TJ = 100°C
300
Vfr1
Forward Recovery Voltage
TJ = 25°C
5
Vfr2
IF = 30A, diF /dt = 240A/µs, VR = 350V
TJ = 100°C
5
Rate of Fall of Recovery Current
TJ = 25°C
400
IF = 30A, diF /dt = -240A/µs, VR = 350V (See Figure 10)
TJ = 100°C
200
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
052-6251 Rev B
Symbol
APT30GT60BRD
1600
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
80
60
TJ = 150°C
TJ = 100°C
40
TJ = 25°C
TJ = -55°C
20
0
0.5
1.0
1.5
2.0
2.5
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
60A
800
30A
400
15A
2.0
40
TJ = 100°C
VR = 350V
15A
10
IM
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
EL
200
TJ = 100°C
VR = 350V
160
120
30A
PR
60A
15A
80
40
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
1.2
trr
trr
IRRM
0.8
Qrr
0.4
0.0
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4, Dynamic Parameters vs Junction Temperature
15.0
1200
1000
TJ = 100°C
VR = 350V
IF = 30A
12.5
800
10.0
Vfr
600
7.5
400
5.0
200
2.5
tfr
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
1.0
D=0.5
0.2
0.1
0.1
0.05
0.05
NOTE:
0.02
0.01
SINGLE PULSE
0.01
PDM
ZΘJC, THERMAL IMPEDANCE
(°C/W)
052-6251 Rev B
0.5
t1
t2
0.005
DUTY FACTOR D = t1 / t2
PEAK TJ =PDM x Z JC + TC
0.001
10-5
10-4
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
30A
Qrr
RY
20
1.6
IN
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
60A
30
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
1200
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
0
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
TJ = 100°C
VR = 350V
A
IF, FORWARD CURRENT
(AMPERES)
100
10-3
10-2
10-1
VR, REVERSE
VOLTAGE
(VOLTS)
RECTANGULAR
PULSE
DURATION
(SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
10
APT30GT60BRD
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
PR
EL
IM
IN
A
RY
+15v
diF /dt Adjust
0v
-15v
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 8, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
052-6251 Rev B
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
0.5 IRRM
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector
(Cathode)
Emitter
(Anode)