ARF446 ARF447 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 250W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 250 Watts. • Gain = 15dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF446/447 UNIT VDSS Drain-Source Voltage 900 VDGO Drain-Gate Voltage 900 Continuous Drain Current @ TC = 25°C 6.5 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 230 Watts Junction to Case 0.55 °C/W ID RθJC TJ,TSTG TL Volts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 900 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX UNIT Volts (ID(ON) = 3.5A, VGS = 10V) 7 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) µA 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 3.5A) 4 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5.7 nA mhos 5 Volts APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4907 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol ARF446/447 Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1500 1800 VDS = 300V 70 130 f = 1 MHz 27 50 VGS = 15V 7 15 VDD = 0.5 VDSS 5 10 ID = ID[Cont.] @ 25°C 23 40 RG = 1.6Ω 12 25 TYP MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ GPS Characteristic MIN Test Conditions Common Source Amplifier Power Gain f = 27.12 MHz VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 Common Source Amplifier Power Gain Pout = 250W Drain Efficiency ψ Electrical Ruggedness VSWR 20:1 20 dB 80 % No Degradation in Output Power f = 40.68 MHz VGS = 0V η VDD = 300V UNIT VDD = 250V Pout = 250W 13 15 dB 70 75 % No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 30 Class C VDD = 250V 25 Pout = 250W 1000 CAPACITANCE (pf) 20 GAIN (dB) Ciss 15 10 500 Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-4907 Rev C 16 12 10 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 20 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 4 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 0 10 OPERATION HERE LIMITED BY RDS (ON) 10µS 100µS 10 5 1mS 1 10mS .5 100mS TC =+25°C TJ =+150°C SINGLE PULSE .1 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF446/447 16 1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) VGS=6.5, 8, 10 & 15V 1.1 1.0 0.9 0.8 0.7 12 6V 8 5.5V 4 5V 4.5V 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) POUT, POWER OUT (WATTS) 300 Class C VDD = 250V 250 f = 40.68 MHz 200 150 100 50 0 0 0 2 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 18 Class C VDD = 250V 16 f = 40.68 MHz 14 12 10 8 0 50 100 150 200 250 300 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.6 0.1 0.2 0.1 0.05 0.05 Note: 0.02 0.01 PDM 0.01 t1 SINGLE PULSE 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 Z in (Ω) 20.40 - j 9.6 2.10 - j 6.4 0.50 - j 2.3 0.30 - j 0.4 0.46 + j 2.0 Z OL (Ω) 142.0 - j 20 73.0 - j 71 30.0 - j 57 15.0 - j 42 6.2 - j 25 Z in - gate shunted by 25Ω Z OL - conjugate of optimum load impedance for 250W at 250V 050-4907 Rev C Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 ARF446/447 40.68 MHz Test Circuit Parts List C1-C3 -- Arco 465 or equivalent C4-C6 -- 1nF 500V COG chip L1 -- 2t #18 AWG .25" ID L2 -- 3t #18 AWG .25" ID L3 -- 8t #18 AWG .25" ID L4 -- VK200-4B ferrite choke 3uH R1 -- 25 Ohm 1/2W Carbon T1 -- 4:1 Broadband Transformer L4 + C4 250V L3 L2 L1 RF Input - C5 DUT C6 C3 RF Output C2 T1 C1 R1 40.68 MHz Test Circuit TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 050-4907 Rev C Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Device ARF446 ARF447 Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382 - 8028 FAX: (541) 388 - 0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61