APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS(ON)=4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package Applications • SO − 8 Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems . Ordering and Marking Information APM 4430 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 4430 K : APM 4430 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Maximum Drain Current – Continuous 23 IDM Maximum Drain Current – Pulsed Unit V A ± 60 ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 1 www.anpec.com.tw APM4430 Absolute Maximum Ratings Symbol PD (TA = 25°C unless otherwise noted) Parameter Rating Maximum Power Dissipation* TJ TA = 25°C 1.6 TA = 70°C 0.625 Maximum Junction Temperature Unit W 150 °C TSTG Storage Temperature Range -55 to 150 RthJA Thermal Resistance – Junction to Ambient 80 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol (TA=25°C unless otherwise noted) Parameter Test Condition APM4430 Min. Typ. Max. Unit Static BVDSS Drain-Source Breakdown IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS RDS(ON) VSD VGS=0V, ID=250µA 30 V VDS=24V, VGS=0V 1 µA VDS =24V, VGS =0V, T j = 55°C 5 µA V VDS=VGS, ID=250µA 1 3 Gate Leakage Current VGS=±20V, VDS=0V ±100 nA Drain-Source On-state VGS=10V, ID=23A 4.5 5 Resistance VGS=5V, ID=17A 7 8 Diode Forward Voltage IS=6A, VGS=0V 0.6 mΩ 1.1 V 55 nC Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VDS=15V, VGS=4.5V, ID=23A 40 17 nC 14 nC 30 45 ns VDD=15V, ID=1A, 16 24 ns VGEN=10V, RG=0.2Ω 100 150 ns 55 ns 70 tf Turn-off Fall Time Ciss Input Capacitance VGS=0V 4800 pF Coss Output Capacitance VDS=15V 900 pF Crss Reverse Transfer Capacitance Frequency=1.0MHz 320 pF Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 2 www.anpec.com.tw APM4430 Typical Characteristics Output Characteristics Transfer Characteristics 60 80 ID-Drain Current (A) 60 VGS=4.5V ID-Drain Current (A) VGS=5,6,7,8,9,10V 70 V GS=4V 50 40 30 20 10 48 36 TJ=25°C 24 TJ=125°C TJ=-55°C 12 V GS=3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 1.0 1.5 VDS-Drain-to-Source Voltage (V) 2.0 2.5 3.0 3.5 4.0 VGS-Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Drain Current 0.4 0.010 ID=250uA RDS(on)-On-Resistance(Ω) VGS(th)-Variance (V) 0.2 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -50 -25 0 TJ-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 0.006 VGS=10V 0.004 0.002 0.000 25 50 75 100 125 150 V GS=5V 0.008 0 10 20 30 40 50 60 ID-Drain Current (A) 3 www.anpec.com.tw APM4430 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.016 0.008 RDS(on)-On Resistance (Ω) RDS(on)-On Resistance (Ω) ID=23A 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0 2 4 6 8 0.007 V GS=10V ID = 23A 0.006 0.005 0.004 0.003 0.002 0.001 0.000 -50 -25 10 VGS-Gate-to-Source Voltage (V) 0 TJ-Junction Temperature (°C ) Gate Charge On-Resistance vs. Junction Temperature 10 V GS=10V ID = 23A VGS-Gate-Source Voltage (V) RDS(on)-On-Resistance(Ω) (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 TJ-Junction Temperature (°C) VDS=15V ID = 23A 8 6 4 2 0 75 100 125 150 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 QG-Gate Charge (nC) 4 www.anpec.com.tw APM4430 Typical Characteristics Capacitance Source-Drain Diode Forward Voltage 7000 70 IS-Source Current (Α) Capacitance (pF) 6000 Ciss 5000 4000 3000 2000 TJ=25°C Coss 1000 0 TJ=150°C 10 Crss 0 5 10 15 20 25 1 0.0 30 VDS-Drain-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 VDS-Source-to-Drain Voltage (V ) Safe Operation Area Single Pulse Power 60 100 ID M ID ID-Drain Current (A) Power (W) 50 40 30 20 10 0 -2 10 10us 10 100us 1ms 1 10ms 100ms 0.1 DC VG S =10V Single Pulse TC=25°C -1 10 0 10 1 10 0.01 0.01 2 10 Time (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 0.1 1 10 100 VDS-Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM4430 S Typical Characteristics Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 1.Duty Cycle,D=t1/t2 2.Per Unit Base=R thJA=80°C 3.TJM-TA=PD MZ t h J A 4.Surface Mounted 0.02 SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 6 www.anpec.com.tw APM4430 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 1. 27B S C 0. 50B S C 8° 8° 7 www.anpec.com.tw APM4430 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 8 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4430 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 9 www.anpec.com.tw APM4430 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Oct., 2001 10 www.anpec.com.tw