HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.500 4L FLG The ASI HF250-50 is Designed for FEATURES: .112x45° L A • PG = 14 dB min. at 220 W/30 MHz • IMD3 = 150 dBc max. at 220 W (PEP) • Omnigold™ Metalization System E FULL R C Ø.125 NOM. C B B E H E D G F MAXIMUM RATINGS IC I J 40 A K DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 VCBO 110 V VCEO 55 V C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VEBO 4.0 V E .125 / 3.18 B PDISS O 140 W @ TC = 25 C O TJ O -65 C to +200 C O -65 C to +150 C θ JC 0.40 OC/W CHARACTERISTICS SYMBOL .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 .280 / 7.11 K O T STG .125 / 3.18 F L ORDER CODE: ASI10615 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CEO IC = 200 mA 55 V BV CES IC = 200 mA 110 V BV EBO IE = 20 mA 4.0 V ICEO VCE = 30 V 10 mA ICES VCE = 60 V 10 mA hFE VCE = 6.0 V 45 --- Cob VCB = 50 V 360 pF GP IMD3 ηC VCE = 50 V -30 dB dBc % IC = 10 A 15 f = 1.0 MHz 14.5 ICQ = 150 mA POUT = 250 W(PEP) 37 A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.