HF5-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF5-12F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: B .112 x 45° A E • PG = 20 dB min. at 5 W/30 MHz • IMD3 = -30 dBc max. at 5.0 W (PEP) • Omnigold™ Metalization System C Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS G IC 4.5 A VCBO 36 V VCEO VEBO PDISS TJ DIM MINIMUM inches / mm inches / mm 18 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 4.0 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 80 W @ TC = 25 C O O O O T STG -65 C to +150 C θ JC 2.2 OC/W CHARACTERISTICS MAXIMUM .385 / 9.78 E O -65 C to +200 C SYMBOL H I F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10590 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 36 V BV CEO IC = 50 mA 18 V BV CES IC = 50 mA 36 V BV EBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V f = 1.0 MHz VCC = 12.5 V ICQ = 25 mA POUT = 5.0 Watts (PEP) f = 30 MHz GP IMD3 IC = 1.0 A 10 15 5.0 mA 200 --- 100 pF 18 dB -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.