HF75-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF75-50F is Designed for FEATURES: B • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W (PEP) • Omnigold™ Metalization System .112 x 45° A E C Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS G IC 3.25 A VCBO 110 V VCEO VEBO PDISS TJ DIM MINIMUM inches / mm inches / mm 55 V A .220 / 5.59 .230 / 5.84 B .785 / 19.94 4.0 V C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 127 W @ TC = 25 C O O -65 C to +200 C -65 OC to +150 OC θ JC 2.0 OC/W CHARACTERISTICS MAXIMUM .385 / 9.78 E O T STG SYMBOL H I F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10610 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CES IC = 100 mA 110 V BV CE0 IC = 200 mA 55 V BV EBO IE = 10 mA 4.0 V hFE VCE = 6.0 V Cob VCB = 50 V GP IMD3 ηC VCE = 50 V IC = 1.4 A 19 --- f = 1.0 MHz POUT = 75 W(PEP) 14 --37 --- 50 --- 100 pF -30 dB dBc % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.