ASI MSC1150M

MSC1150M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 2NL FLG
The ASI MSC1150M is Designed for
Class C, DME/TACAN Applications
up to 1150 MHz.
A
.0 2 5 x 4 5 °
4 x .0 6 2 x 4 5 °
2X B
ØD
C
E
F
FEATURES:
G
H
• Internal Input/Output Matching Networks
• PG = 7.8 dB at 150 W/1150 MHz
• Omnigold™ Metalization System
L
M
11 A
VCC
55 V
400 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
0.3 °C/W
CHARACTERISTICS
M IN IM U M
M A X IM U M
inches / m m
inches / m m
A
.0 2 0 / 0 .5 1
.0 3 0 / 0 .7 6
B
.1 0 0 / 2 .5 4
C
.3 7 6 / 9 .5 5
D
.1 1 0 / 2 .7 9
.1 3 0 / 3 .3 0
E
.3 9 5 / 1 0 .0 3
.4 0 7 / 1 0 .3 4
.3 9 6 / 1 0 .0 6
F
.1 9 3 / 4 .9 0
G
.4 5 0 / 1 1 .4 3
.1 2 5 / 3 .1 8
I
.6 4 0 / 1 6 .2 6
J
.8 9 0 / 2 2 .6 1
.6 6 0 / 1 6 .7 6
.9 1 0 / 2 3 .1 1
K
.3 9 5 / 1 0 .0 3
.4 1 5 / 1 0 .5 4
L
.0 0 4 / 0 .1 0
.0 0 7 / 0 .1 8
M
.0 5 2 / 1 .3 2
.0 7 2 / 1 .8 3
N
.1 1 8 / 3 .0 0
.1 3 1 / 3 .3 3
.2 3 0 / 5 .8 4
P
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
N
D IM
H
PDISS
K
P
MAXIMUM RATINGS
IC
I
J
BVCBO
IC = 10 mA
BVCER
IC = 15 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PG
ηC
VCC = 50 V
RBE = 10 Ω
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.5
V
15
f = 1.0 MHz
POUT = 150 W
f = 1025 - 1150 MHz
UNITS
7.8
40
8.3
42
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
12.5
mA
120
---
80
pF
dB
%
REV. B
1/1