TVV005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVV005 is Designed for A 45° D FEATURES: S B • • • Omnigold™ Metalization System S G C D J E MAXIMUM RATINGS I F G IC 4.0 A VCBO 55 V VCEO 30 V VEBO 4.0 V PDISS H K 50 W @ TC = 25 C MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .130 / 3.30 G -65 OC to +200 OC O .245 / 6.22 TSTG -65 C to +200 C θ JC 3.5 OC/W CHARACTERISTICS SYMBOL .255 / 6.48 .640 / 16.26 I O .137 / 3.48 .572 / 14.53 H TJ MAXIMUM DIM F O #8-32 UNC J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10654 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 20 mA BVCBO MINIMUM TYPICAL MAXIMUM UNITS 30 V 55 V IC = 20 mA 55 V BVEBO IE = 2.0 mA 4.0 V hFE VCE = 5.0 V COB VCB = 28 V f = 1.0 MHz PG VCE = 28 V POUT = 5.0 W IC = 1.0 A f = 225 MHz 15 dB VCE = 28 V POUT = 5.0 W IC = 1.0 A f = 225 MHz Vision Carrier = -8 dB ref. Sound Carrier = -7 dB ref. Sideband Signal = -16 dB ref. -55 dBc IMD1 ψ RBE = 10 Ω IC = 100 mA VCE = 28 V POUT = 5.0 W IC = 1.0 A Load VSWR = 00:1, All Phase Angles 10 f = 225 MHz --- 35 pF No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- REV. A 1/1