DYNEX DCR1673SA

DCR1673SA
DCR1673SA
Phase Control Thyristor
FDS5646-2.0 February 2004
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
2800V
IT(AV)
5088A
ITSM
83000A
dVdt*
1000V/µs
dI/dt
250A/µs
■ High Surge Capability
■ High Mean Current
■ Fatigue Free
APPLICATIONS
*Higher dV/dt selections available
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
DCR1673SA28
DCR1673SA27
DCR1673SA26
DCR1673SA25
DCR1673SA24
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
2800
2700
2600
2500
2400
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
Lower voltage grades available.
Outline type code: A.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1673SA27
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1673SA
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
5088
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
7995
A
Continuous (direct) on-state current
-
7280
A
3300
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
5180
A
Continuous (direct) on-state current
-
4350
A
Conditions
Max.
Units
3990
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
6320
A
Continuous (direct) on-state current
-
5570
A
2540
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3980
A
Continuous (direct) on-state current
-
3250
A
IT
Half wave resistive load
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DCR1673SA
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
66.4
kA
VR = 50% VRRM - 1/4 sine
22.0 x 106
A2s
10ms half sine; Tcase = 125oC
83.0
kA
VR = 0
34.4 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0065
o
Anode dc
-
0.013
o
Cathode dc
-
0.013
o
C/W
Double side
-
0.001
o
C/W
Single side
-
0.002
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
125
o
Clamping force
74.0
91.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 83.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1673SA
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
500
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC
-
1000
V/µs
-
250
A/µs
Rate of rise of on-state current
From 67% VDRM to 1100A
Gate source 1A
tr = 0.5µs, Tj = 125oC
Repetitive 50Hz
dI/dt
Non-repetitive
-
500
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
0.82
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.076
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 20V, 10Ω
tr = 0.5µs, Tj = 25oC
1.0
1.5
µs
IL
Latching current
Tj = 25oC, VD = 5V
150
750
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
40
200
mA
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
500
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
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DCR1673SA
CURVES
10000
9000
8000
8000
7000
7000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
9000
10000
Measured under pulse conditions
Tj = 125˚C
6000
5000
4000
3000
6000
5000
4000
3000
2000
2000
1000
1000
0
0.6
0.7
0.8 0.9
1
1.1 1.2 1.3 1.4
Instantaneous on-state voltage, VT - (V)
1.5
Fig.2 Maximum (limit) on-state characteristics
1.6
0
0
dc
1/2 wave
3 phase
6 phase
12 phase
1000
2000
3000
4000
5000
Mean on-state current, IT - (A)
6000
7000
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.6180535
B = 0.007965
C = 4.57 x 10–5
D = 4.003 x 10–3
these values are valid for Tj = 125˚C for IT 200A to 10000A
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DCR1673SA
100000
100
Tj = 125˚C
Table gives pulse power PGM in Watts
Pulse Width
Recovered charge Qr - (µC)
Gate trigger voltage, VGT - (V)
IT = 3000A
10000
Frequency Hz
50
150
150
150
150
20
µs
100
200
500
1ms
10ms
100
150
150
150
100
-
400
150
125
100
25
-
VFGM
100W
50W
20W
10W
10
r
pe
p
U
1
9
it
m
Li
9%
Tj = 25˚C
%
VGD
1000
1
10
100
Lo
w
L
er
im
it 1
IGD
0.1
0.001
IFGM
0.01
0.1
1.0
Gate trigger current, IGT - (A)
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Recovered charge
10
Fig.5 Gate characteristics
200
0.01
Double side cooled
0.001
Double side
0.0065
0.0072
0.0073
0.0076
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
30
100
20
I2t
50
10
Effective thermal resistance
Junction to case ˚C/W
Conduction
0.0001
0.001
150
1
Anode side
0.0130
0.0137
0.0138
0.0141
10
0
1
100
Time - (s)
10
ms
5
1
10
I2t value for fusing - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
Peak half sinewave on-state current - (kA)
0.1
0
50
Cycles at 50Hz
Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1673SA
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode tab
Cathode
Ø148 nom
Ø100 nom
35.0 ± 0.5
Ø1.5
Gate
Ø100 nom
Anode
Ø138.5
Nominal weight: 2575g
Clamping force: 83kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: A
Fig.8 Package outline
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always
be followed.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
© Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
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