DYNEX DSF21545SV

DSF21545SV
DSF21545SV
Fast Recovery Diode
Replaces March 1998 version, DS4153-3.1
DS4153-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
VRRM
4500V
IF(AV)
3230A
IFSM
20000A
Qr
1800µC
trr
7.0µs
■ The DSF21545SV is a purpose designed freewheel
diode to complement the DG858BW GTO in inverter
circuits, using energy recovery snubbers.
FEATURES
■ The DSF21545SV is designed for fast turn-on thus
minimising reverse current through the GTO.
■ Low recovered charge for low losses.
■ DSF21545SV is housed in a similar outline to that of the
DG858BW therefore offering complete mechanical
compatibility for parallel and series clamping.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF21545SV45
4500
Conditions
VRSM = VRRM + 100V
Lower voltage grades available.
Outline type code: V.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
3230
A
IF(RMS)
RMS value
Tcase = 65oC
5080
A
Continuous (direct) forward current
Tcase = 65oC
4680
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
2070
A
IF(RMS)
RMS value
Tcase = 65oC
3255
A
Continuous (direct) forward current
Tcase = 65oC
2875
A
IF
1/8
DSF21545SV
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
20
kA
2.0 x 106
A2s
16
kA
1.28 x 106
A2s
-
kA
-
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 100% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Conditions
Parameter
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.0075
o
Anode dc
-
0.015
o
Cathode dc
-
0.015
o
Double side
-
0.002
o
Single side
-
0.004
o
-
150
o
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 35.0kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
150
Clamping force
34
48
kN
Typ.
Max.
Units
-
On-state (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 3000A peak, Tcase = 25oC
-
2.0
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
150
mA
7.0
-
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
1800
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
500
A
K
Soft factor
2
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.25
V
rT
Slope resistance
At Tvj = 150oC
-
0.25
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
75
V
VFRM
2/8
Parameter
DSF21545SV
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
5000
Measured under
pulse conditions
Instantaneous forward current IF - (A)
4000
3000
2000
Tj = 25˚C
Tj = 150˚C
1000
0
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
3/8
DSF21545SV
500
Measured under
pulse conditions
Instantaneous forward current IF - (A)
400
300
Tj = 25˚C
Tj = 150˚C
200
100
0
0
0.5
1.0
1.5
2.0
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
250
Current
waveform
VFR
Voltage
waveform
Transient forward votage VFP - (V)
200
δy
di = δy
dt δx
δx
150
Tj = 125˚C limit
100
Tj = 25˚C limit
50
0
500
1000
1500
2000
2500
3000
Rate of rise of forward current dIF/dt - (A/µs)
Fig.3 Transient forward voltage vs rate of rise of forward current
4/8
DSF21545SV
100000
QS = ∫
IF
50µs
Conditions:
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
1000
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Recovered charge
10000
Conditions:
Tj = 150 ˚C,
Reverse recovery current IRR - (A)
VR = 100V
IF = 4000A
IF = 2000A
IF = 1000A
IF = 500A
1000
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.5 Typical reverse recovery current vs rate of rise of reverse current
5/8
DSF21545SV
Thermal impedance - ˚C/W
0.1
d.c.Double side cooled
0.01
0.001
0.0001
0.001
0.01
0.1
1.0
10
Time - (s)
Fig.5 Maximum (limit) transient thermal impedance - junction to case
6/8
100
DSF21545SV
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep (In both electrodes)
Cathode
27.0
25.4
Ø112.5 max
Ø73 nom
Ø73 nom
Anode
Nominal weight: 1100g
Clamping force: 43kN ±10%
Package outine type code: V
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
DSF21545SV
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4153-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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