DYNEX GP400DDS18

GP400DDS18
GP400DDS18
Dual Switch IGBT Module
Preliminary Information
DS5359-2.0 January 2001
FEATURES
■
Non Punch Through Silicon
■
Isolated Copper Baseplate
■
Low Inductance Internal Construction
KEY PARAMETERS
VCES
(typ)
VCE(sat)
(max)
IC
(max)
IC(PK)
1800V
3.5V
400A
1600A
APPLICATIONS
■
High Power Inverters
■
Motor Controllers
■
Induction Heating
■
Resonant Converters
11(G2)
12(C2)
10(E2)
3(C1)
4(E2)
2(C2)
1(E1)
5(E1)
7(C1)
6(G1)
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP400DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
Fig. 1 Dual switch circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
5
6
ORDERING INFORMATION
Order As:
3
1
4
2
7
8
GP400DDS18
9
Note: When ordering, please use the whole part number.
12
11
10
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
Parameter
VGE = 0V
-
Max.
Units
1800
V
±20
V
Continuous collector current
Tcase = 65˚C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 105˚C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25˚C, Tj = 150˚C
3000
W
Visol
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
4000
V
Min.
Max.
Units
-
42
˚C/kW
-
80
˚C/kW
-
8
˚C/kW
Transistor
-
150
˚C
Diode
-
125
˚C
–40
125
˚C
Mounting - M6
-
5
Nm
Electrical connections - M4
-
2
Nm
Electrical connections - M8
-
10
Nm
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Test Conditions
Parameter
Thermal resistance - transistor (per arm)
Continuous dissipation junction to case
Rth(j-c)
Thermal resistance - diode (per arm)
Continuous dissipation junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm
(with mounting grease)
Tj
Tstg
-
2/10
Junction temperature
Storage temperature range
Screw torque
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Min.
Typ.
Max.
Units
VGE = 0V, VCE = VCES
-
-
1
mA
VGE = 0V, VCE = VCES, Tcase = 125˚C
-
-
12
mA
Gate leakage current
VGE = ±20V, VCE = 0V
-
-
2
µA
VGE(TH)
Gate threshold voltage
IC = 20mA, VGE = VCE
4.5
5.5
6.5
V
VCE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 400A
-
3.5
4
V
VGE = 15V, IC = 400A, , Tcase = 125˚C
-
4.3
5
V
ICES
IGES
Test Conditions
Parameter
Symbol
Collector cut-off current
IF
Diode forward current
DC
-
400
-
A
IFM
Diode maximum forward current
tp = 1ms
-
800
-
A
VF
Diode forward voltage
IF = 400A
-
2.2
2.5
V
IF = 400A, Tcase = 125˚C
-
2.3
2.6
V
VCE = 25V, VGE = 0V, f = 1MHz
-
45
-
nF
-
20
-
nH
Cies
Input capacitance
LM
Module inductance
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Min.
Typ.
Max.
Units
IC = 400A
-
900
1100
ns
Fall time
VGE = ±15V
-
280
350
ns
EOFF
Turn-off energy loss
VCE = 900V
-
80
100
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
500
650
ns
L ~ 100nH
-
200
400
ns
-
140
180
mJ
IF = 400A, VR = 50% VCES,
-
80
100
µC
dIF/dt = 3000A/µs
-
250
-
A
-
70
-
mJ
Min.
Typ.
Max.
Units
IC = 400A
-
1010
1200
ns
Fall time
VGE = ±15V
-
390
500
ns
EOFF
Turn-off energy loss
VCE = 900V
-
100
150
mJ
td(on)
Turn-on delay time
RG(ON) = RG(OFF) = 2.2Ω
-
660
800
ns
L ~ 100nH
-
310
400
ns
-
200
270
mJ
IF = 400A, VR = 50% VCES,
-
110
150
µC
dIF/dt = 2500A/µs
-
300
-
A
-
70
-
mJ
Symbol
td(off)
tf
tr
Parameter
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Test Conditions
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Parameter
Symbol
td(off)
tf
tr
Turn-off delay time
Rise time
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
4/10
Diode reverse recovery energy
Test Conditions
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
TYPICAL CHARACTERISTICS
Vge = 20/15/12V
Vge = 20/15/12V
800
800
700
Common emitter
Tcase = 25˚C
700
600
Vge = 10V
Collector current, IC - (A)
Collector current, Ic - (A)
600
500
400
300
400
300
200
100
100
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
6.0
0
0
7.0
Fig. 3 Typical output characteristics
280
260
9.0 10.0
Tcase = 125˚C
VGE = ±15V
VCE = 900V
240
Turn-on energy, EON - (mJ)
Turn-on energy, EON - (mJ)
2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-emitter voltage, Vce - (V)
300
Tcase = 25˚C
VGE = ±15V
VCE = 900V
320
280
240
A
200
B
160
C
120
A
220
200
B
180
C
160
140
120
100
80
60
80
A: Rg = 4.7Ω
B: Rg = 3.3Ω
C: Rg = 2.2Ω
40
0
0
1.0
Fig. 4 Typical output characteristics
400
360
Vge = 10V
500
200
0
0
Common emitter
Tcase = 125˚C
50
100
150
200
250
300
Collector current, IC - (A)
350
Fig. 5 Typical turn-off energy vs collector current
A: Rg = 4.7Ω
B: Rg = 3.3Ω
C: Rg = 2.2Ω
40
20
400
0
0
50
100
150
200
250
300
Collector current, IC - (A)
400
Fig. 6 Typical turn-off energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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350
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GP400DDS18
150
125
A
Turn-off energy, EOFF - (mJ)
Turn-off energy, EOFF - (mJ)
125
150
Tcase = 25˚C
VGE = ±15V
VCE = 900V
100
B
75
C
50
25
0
0
100
150
250
300
200
Collector current, IC - (A)
350
C
75
50
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 2.2Ω
100
50
1400
VGE = ±15V
VCE = 900V
Rg = 2.2Ω
1200
Tcase = 125˚C
Switching times, ts - (ns)
Tcase = 25˚C
30
20
350
400
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 2.2Ω
td(off)
1000
40
200
150
250
300
Collector current, IC - (A)
Fig. 8 Typical turn-off energy vs collector current
60
Diode turn-off energy, Eoff(diode) - (mJ)
B
100
0
0
400
Fig. 7 Typical turn-off energy vs collector current
50
A
25
A: Rg = 13Ω
B: Rg = 6.8Ω
C: Rg = 2.2Ω
50
Tcase = 125˚C
VGE = ±15V
VCE = 900V
800
td(on)
600
tf
400
tr
10
200
0
0
50
100
150
200
250
300
350
400
Collector current, IC - (A)
Fig. 9 Typical diode turn-off energy vs collector current
6/10
0
0
50
100
150
200
250
300
Collector current, IC - (A)
350
400
Fig. 10 Typical switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
1000
800
900
700
Tj = 25˚C
800
700
Collector current, IC - (A)
Foward current, IF - (A)
600
500
Tj = 125˚C
400
300
600
500
400
300
200
200
100
100
Tcase = 125˚C
Vge = ±15V
Rg(min) = 4.3Ω
Rg(min) : Minimum recommended value
0
0
0.5
2.0
1.0
1.5
2.5
Foward voltage, VF - (V)
3.0
0
0
3.5
Fig. 12 Reverse bias safe operating area
Fig. 11 Diode typical forward characteristics
10000
IC max. (single pulse)
IC
.
ax
m
100
C
D
(c
50µs
uo
tin
on
100µs
)
us
10
tp = 1ms
Transient thermal impedance, Zth (j-c) - (°C/kW )
100
1000
Collector current, IC - (A)
2000
1200
400
800
1600
Collector-emitter voltage, Vce - (V)
Diode
Transistor
10
1
0.1
1
1
10
100
1000
Collector-emitter voltage, Vce - (V)
Fig. 13 Forward bias safe operating area
10000
1
10
100
Pulse width, tp - (ms)
10000
Fig.14 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1000
7/10
GP400DDS18
700
900
PWM Sine Wave
Power Factor = 0.9,
Modulation Index =1
600
700
DC collector current, IC - (A)
Inverter phase current, IC(PK) - (A)
800
600
500
400
300
500
400
300
200
200
Conditions:
Tj = 125˚C, Tcase = 75˚C
Rg = 4.3Ω, VCC = 900V
100
100
0
1
10
fmax - (kHz)
Fig.15 3-Phase inverter operating frequency
8/10
20
0
0
20
40
60
80
100
120
Case temperature, Tcase - (˚C)
140
160
Fig.16 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
62
62
13
15
15
5
2
57
4
11.85
1
43.3
57
65
8
9
26
12
13
3
7
18
16
24
65
6
11
10
14 11.5
20
35
6x Ø7
4x M8
38
28
31.5
6x M4
5
140
Nominal weight: 1600g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
Gate drive considerations to maximise IGBT efficiency
AN4506
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with Concept gate drivers
AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD
design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of Dynex semiconductors.
An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
10/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP400DDS18
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontarion, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5359-2 Issue No. 2.0 January 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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11/10