GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. KEY PARAMETERS 1200V (typ) 2.7V (max) 800A (max) 1600A VCES VCE(sat) IC IC(PK) 5 6 7 3 1 4 2 8 9 12 11 10 Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters. Outline type code: F FEATURES (See package details for further information) ■ n - Channel ■ Enhancement Mode ■ High Input Impedance ■ Optimised For High Power High Frequency Operation ■ Isolated Base 8(E1) ■ Full 1200V Capability 9(G1) ■ 800A Per Module Fig. 1 Electrical connections - (not to scale) 3/4(E) 1/2(C) 7(C1) Fig.2 Single switch circuit diagram APPLICATIONS ORDERING INFORMATION ■ High Power Switching Order As: GP800FSS12 ■ Motor Control Note: When ordering, please use the complete part number. ■ Inverters ■ Traction Systems Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11 GP800FSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Tcase = 25˚C unless stated otherwise. Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Collector current IC(PK) Test Conditions Max. Units 1200 V ±20 V DC, Tcase = 25˚C 1050 A DC, Tcase = 75˚C 800 A 1ms, Tcase = 75˚C 1600 A VGE = 0V - Pmax Maximum power dissipation Tcase = 25˚C (Transistor) 6000 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V THERMAL AND MECHANICAL RATINGS Symbol Parameter 21 o - 40 o Mounting torque 5Nm (with mounting grease) - 8 o Transistor - 150 o Diode - 125 o –40 125 o Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm Thermal resistance - transistor DC junction to case Rth(j-c) Thermal resistance - diode DC junction to case Rth(c-h) Thermal resistance - Case to heatsink (per module) Junction temperature Tstg - Storage temperature range Screw torque Max. Units - Rth(j-c) Tj Min. Conditions - - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11 C/kW C/kW C/kW C C C GP800FSS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Symbol Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 50 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±4 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4 - 7.5 V 2.7 3.5 V Collector-emitter saturation voltage VGE = 15V, IC =800A - VCE(SAT) VGE = 15V, IC = 800A, Tcase = 125˚C - 3.2 4.0 V ICES Parameter Collector cut-off current IGES Conditions IF Diode forward current DC - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A VF Diode forward voltage IF = 800A - 2.2 2.4 V IF = 800A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF - 20 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11 GP800FSS12 INDUCTIVE SWITCHING CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25˚C unless stated otherwise Symbol td(off) tf Parameter Conditions Turn-off delay time Fall time EOFF Turn-off energy loss IC = 800A VGE = ±15V td(on) Turn-on delay time VCE = 600V RG(ON) = RG(OFF) = 3.3Ω tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge L ~ 100nH IF = 800A VR = 50%VCES, dIF/dt = 2000A/µs Min. Typ. Max. Units - 1100 1300 ns - 150 200 ns - 130 170 mJ - 800 900 ns - 320 400 ns - 90 130 mJ - 150 200 µC - 170 - µC - 1300 1500 ns - 200 250 ns - 170 250 mJ - 950 1200 ns - 350 450 ns - 150 200 mJ - 200 260 µC - 225 - µC Tcase = 125˚C unless stated otherwise. td(off) tf Turn-off delay time Fall time EOFF Turn-off energy loss IC = 800A VGE = ±15V td(on) Turn-on delay time VCE = 600V RG(ON) = RG(OFF) = 3.3Ω tr Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Qrr Diode reverse recovery charge L ~ 100nH IF = 800A VR = 50%VCES, dIF/dt = 2000A/µs Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/11 GP800FSS12 SWITCHING DEFINITIONS +15V Vge 10% 0V -15V t 4 + 5µs Eon = ∫V .I dt ce c IC 90% t1 td(on) = t2 - t1 10% tr = t3 - t2 Vce t1 t2 t4 t3 Fig.3 Definition of turn-on switching times +15V 90% 0V Vge -15V t 7 + 5µs Eoff = ∫V .I dt ce c t5 90% td(off) = t6 - t5 IC 10% tf = t7 - t6 Vce t5 t6 t7 Fig.4 Definition of turn-off switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11 GP800FSS12 CURVES Vge = 20/15/12/10V Vge = 20/15/12/10V 1600 1400 1600 Common emitter Tcase = 25˚C 1400 1200 Collector current, IC - (A) Collector current, IC - (A) 1200 1000 800 600 1000 800 600 400 400 200 200 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig.5 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig.6 Typical output characteristics 220 160 Conditions: Tcase = 25˚C, VCE = 600V, VGE = ±15V 140 Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V 200 A 180 120 A 160 Turn-on energy, Eon - (mJ) Turn-on energy, Eon - (mJ) Common emitter Tcase = 125˚C B B 140 100 C 120 80 C 100 60 40 80 60 40 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 0 0 0 100 200 300 400 500 600 Collector current, IC - (A) 700 Fig.7 Typical turn-on energy vs collector current 800 0 100 200 300 400 500 600 Collector current, IC - (A) 700 Fig.8 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11 800 GP800FSS12 180 250 Conditions: Tcase = 25˚C, VCE = 600V, VGE = ±15V 160 A 200 140 B Turn-off energy, Eoff - (mJ) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V 120 C 100 80 60 40 100 200 300 400 500 600 Collector current, IC - (A) 700 0 800 0 Conditions: VCE = 600V, VGE = 15V, Rg = 3.3Ω 100 200 300 400 500 600 Collector current, IC - (A) 700 800 Fig.10 Typical turn-off energy vs collector current 2000 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω 1800 Tcase = 125˚C td(off) 1600 50 tf 1400 Switching times, ts - (ns) Diode turn-off energy, Eoff(Diode) - (mJ) 100 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω Fig.9 Typical turn-off energy vs collector current 60 C 50 0 70 B 150 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 0 A 1200 40 1000 Tcase = 25˚C 30 20 td(on) 800 600 400 10 200 tr 0 0 0 200 400 600 Collector current, IC (A) 800 Fig.11 Typical diode reverse recovery charge vs collector current 0 100 200 300 400 500 600 Collector currrent, IC - (A) 700 800 Fig.12 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11 GP800FSS12 1600 2000 1400 1800 1600 Tj = 25˚C Collector current, IC - (A) Forward current, IF - (A) 1200 Tj = 125˚C 1000 1400 1200 800 1000 600 800 600 400 400 200 200 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 0 0 3.5 Fig.13 Diode typical forward characteristics 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 IC max. (single pulse) 1000 µs 50 IC 1m s = 0µ 10 tp s .D ax m C 100 on (c uo tin ) us 10 Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.15 Forward bias safe operating area 10000 1 10 100 Pulse width, tp - (ms) 1000 Fig.16 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11 1200 Fig.14 Reverse bias safe operating area 10000 Collector current, IC - (A) Tcase = 125˚C Vge = ±15V Rg = 3.3Ω* *Recommended minimum value 10000 GP800FSS12 2000 1200 1800 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 1000 1400 Collector current, IC - (A) Inverter phase current, IC(PK) - (A) 1600 1200 1000 800 600 800 600 400 400 Conditions: 200 Tj = 125°C, Tc = 75°C, Rg = 3.3Ω, VCC = 600V 0 1 10 fmax - (kHz) Fig.17 3-Phase inverter operating frequency 200 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.18 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11 GP800FSS12 Package Details For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 15 15 5 1 4 2 57 3 65 6 8 16 2.5 18.5 18 7 9 43.3 57 65 12 11 10 14.5 11 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Nominal weight: 1600g Module outline type code: F ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries AN4508 AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with concept gate drivers AN5190 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/11 GP800FSS12 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5239-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11